2SC2712-LL Datasheet. Specs and Replacement

Type Designator: 2SC2712-LL

SMD Transistor Code: LL

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 350

Noise Figure, dB: -

Package: SOT23

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2SC2712-LL datasheet

 5.2. Size:1121K  cn evvo

2sc2712-o 2sc2712-y 2sc2712-g 2sc2712-l.pdf pdf_icon

2SC2712-LL

2SC2712 NPN Transistors 3 2 1.Base 2.Emitter 1 3.Collector Features High voltage and high current VCEO = 50 V, IC = 150 mA (max) Simplified outline(SOT-23) Excellent hFE linearity hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.) High hFE hFE = 70 700 Low noise NF = 1dB (typ.), 10dB (max) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V... See More ⇒

 6.1. Size:474K  toshiba

2sc2712-o 2sc2712-y 2sc2712-gr 2sc2712-bl.pdf pdf_icon

2SC2712-LL

2SC2712 Bipolar Transistors Silicon NPN Epitaxial Type 2SC2712 1. Applications Low-Frequency Amplifiers Audio Frequency General Purpose Amplifier Applications AM Amplifiers 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage VCEO = 50 V (3) High collector current IC = 150 mA (max) (4) High hFE hFE = 70 to 700 (5) Excellent h... See More ⇒

Detailed specifications: 2SB1115-YM, 2SB1386P, 2SB1386Q, 2SB1386R, 2SB806-KP, 2SB806-KQ, 2SB806-KR, 2SC2712-LG, TIP142, 2SC2712-LO, 2SC2712-LY, 2SC2873O, 2SC2873Y, 2SC2884Y, 2SC3356K-B, 2SC3356K-C, 2SC3356K-D

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