All Transistors. 2SC2712-LY Datasheet

 

2SC2712-LY Datasheet and Replacement


   Type Designator: 2SC2712-LY
   SMD Transistor Code: LY
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT23
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2SC2712-LY Datasheet (PDF)

 ..1. Size:2374K  cn shikues
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2SC2712-LY

 5.1. Size:1696K  slkor
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2SC2712-LY

 5.2. Size:1121K  cn evvo
 2sc2712-o 2sc2712-y 2sc2712-g 2sc2712-l.pdf pdf_icon

2SC2712-LY

2SC2712NPN Transistors321.Base2.Emitter1 3.CollectorFeaturesHigh voltage and high current: VCEO = 50 V, IC = 150 mA (max) Simplified outline(SOT-23)Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)High hFE: hFE = 70 700Low noise: NF = 1dB (typ.), 10dB (max)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage V

 6.1. Size:474K  toshiba
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2SC2712-LY

2SC2712Bipolar Transistors Silicon NPN Epitaxial Type2SC27121. Applications Low-Frequency Amplifiers Audio Frequency General Purpose Amplifier Applications AM Amplifiers2. Features(1) AEC-Q101 qualified (Please see the orderable part number list)(2) High voltage: VCEO = 50 V(3) High collector current: IC = 150 mA (max)(4) High hFE: hFE = 70 to 700(5) Excellent h

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Keywords - 2SC2712-LY transistor datasheet

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