2SD1615GM Specs and Replacement

Type Designator: 2SD1615GM

SMD Transistor Code: GM

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 19 pF

Forward Current Transfer Ratio (hFE), MIN: 135

Noise Figure, dB: -

Package: SOT89

 2SD1615GM Substitution

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2SD1615GM datasheet

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2SD1615GM

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2SD1615GM

DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS World Standard Miniature Package in millimeters Low VCE (sat) VCE(sat) = 0.15 V Complement to 2SB111... See More ⇒

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2SD1615GM

DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS World Standard Miniature Package in millimeters Low VCE (sat) VCE(sat) = 0.15 V Complement to 2SB111... See More ⇒

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2SD1615GM

SMD Type Transistors NPN Transistors 2SD1615 1.70 0.1 Features Low VCE(sat) Complementary to 2SB1115 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1 A Col... See More ⇒

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Detailed specifications: 2SC5053R, 2SD1000K, 2SD1000L, 2SD1007HQ, 2SD1614XL, 2SD1614XM, 2SD1615GK, 2SD1615GL, 13007, 2SD1766P, 2SD1766Q, 2SD1766R, 2SD1781K-Q, 2SD1781K-R, 2SD1898Q, 2SD1898R, 2SD2150R

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