B772R Datasheet, Equivalent, Cross Reference Search
Type Designator: B772R
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT89-3L
B772R Transistor Equivalent Substitute - Cross-Reference Search
B772R Datasheet (PDF)
b772r b772o b772y b772gr.pdf
B772 TRANSISTOR PNPFEATURES Low speed switching SOT-89 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. BASESymbol Parameter Value Units2. COLLECTORVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V 3. EMITTERVEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.5 W Tj Junction Tempera
b772r b772o b772y b772gr.pdf
SOT-89-3L Plastic-Encapsulate PNP Transistors EncapsulateFEATURE Low speed switching MARKING:B772 MAXIMUM RATINGS (Ta=25 unless otherwise noted) unless otherwise noted)ELECTRICAL CHARACTERISTICS (TELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) 1 of 2 2 of 2
b772r b772o b772y b772gr.pdf
B772 SOT-89-3L Plastic-Encapsulate Transistors TRANSISTORPNPSOT-89-3L FEATURE Low speed switching 1. BASEMARKING:B772 2. COLLETOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit3. EMITTERVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC C
b772r b772o b772y b772gr.pdf
B772 TRANSISTORPNPSOT-89FEATURE Low speed switching 1. BASEMARKING:B772 2. COLLETOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit3. EMITTERVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.5 W Thermal Res
b772r b772o b772y b772gr.pdf
B772 TRANSISTOR(PNP)SOT-89-3L SOT-89-3LSOT-89-3LPlastic-Encapsulate Transistors Features Low speed switching Power Dissipation of 500mW High Stability and High Reliability Mechanical Data SOT-89-3L Outline Plastic Package Epoxy UL: 94V-0Marking: B772 Mounting Position: Any(TA = 25
b772r b772q b772p b772e.pdf
D882AO3400SI2305B772PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Collector Current 3 A-ICPPea
st2sb772r.pdf
ST 2SB772R PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 6 V -IC Collector Current 3 A OTotal Power Dissipati
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
