C1815G Specs and Replacement
Type Designator: C1815G
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT23
C1815G Substitution
- BJT ⓘ Cross-Reference Search
C1815G datasheet
mmbtsc1815o mmbtsc1815y mmbtsc1815g mmbtsc1815l.pdf 
MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO ... See More ⇒
2sc1815o 2sc1815y 2sc1815g 2sc1815l.pdf
2SC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor 2SA1015 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurations. ... See More ⇒
2sc1815o 2sc1815q 2sc1815gr 2sc1815bl.pdf
2SC1815 Equivalent Circuit Collector-Base Voltage 60 V Collector-Emitter Voltage 50 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.15 A Collector Power D... See More ⇒
Detailed specifications: B722S-E, B722S-P, B722S-Q, B722S-R, B772GR, B772O, B772R, B772Y, 2SA1837, C1815L, C1815O, C1815Y, D882GR, D882O, D882R, D882S-E, D882S-P
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