D882R Datasheet, Equivalent, Cross Reference Search
Type Designator: D882R
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT89
D882R Transistor Equivalent Substitute - Cross-Reference Search
D882R Datasheet (PDF)
d882r d882o d882q d882gr.pdf
D882TRANSISTOR (NPN) FEATURES Power dissipationSOT-89 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASESymbol Parameter Value Unit VCBO Collector-Base Voltage 40 V 2. COLLECTORVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V 3. EMITTERIC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150
d882r d882o d882y d882gr.pdf
SOT -89 Plastic-Encapsulate NPN Transistors FEATURES Power dissipation 0.5W MAXIMUM RATINGS (TA=25 unless otherwise noted) ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified) 1 of 2 Typical characteristics 2 of 2
d882r d882o d882y d882gr.pdf
D882 SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Power dissipation 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dis
d882r d882o d882y d882gr.pdf
D882 D882 TRANSISTOR (NPN) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power dissipation 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W Thermal Resistance fr
d882r d882o d882y d882gr.pdf
D882 TRANSISTOR(NPN)SOT-89-3L SOT-89-3LSOT-89-3LPlastic-Encapsulate Transistors Features Low speed switching Power Dissipation of 500mW High Stability and High Reliability Mechanical Data SOT-89-3L Outline Plastic Package Epoxy UL: 94V-0Marking: D882 Mounting Position: Any(TA = 25
d882r d882q d882p d882e.pdf
D882AO3400SI2305D882NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 APeak Collector Current (t = 10
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
