2SB1261-L Specs and Replacement
Type Designator: 2SB1261-L
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 160
Package: TO252
2SB1261-L Substitution
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2SB1261-L datasheet
2sb1261-m 2sb1261-l 2sb1261-k.pdf ![]()
2SB1261 Silicon PNP Power Transistors DESCRIPTION Low Collector Saturation Voltage High Power Dissipation- P = 10W(Max)@T =25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier and switching, especially in hybrid integrated circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors TO-251-3L 2SB1261-Z TRANSISTOR (PNP) FEATURES 1. BASE High hFE Low VCE(sat) 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base V... See More ⇒
Detailed specifications: 2SB1132-P, 2SB1132-Q, 2SB1132-R, 2SB1188-P, 2SB1188-Q, 2SB1188-R, 2SB1197K-Q, 2SB1197K-R, 2SC5200, 2SB1261-M, 2SC1815C, 2SC1815D, 2SC1815E, 2SC1815Q, 2SC2412K-Q, 2SC2412K-R, 2SC2412K-S
Keywords - 2SB1261-L pdf specs
2SB1261-L cross reference
2SB1261-L equivalent finder
2SB1261-L pdf lookup
2SB1261-L substitution
2SB1261-L replacement
History: 2SC211 | 2SD288
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