2SB1261-L PDF and Equivalents Search

 

2SB1261-L Specs and Replacement

Type Designator: 2SB1261-L

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: TO252

 2SB1261-L Substitution

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2SB1261-L datasheet

 ..1. Size:969K  slkor

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2SB1261-L

2SB1261 Silicon PNP Power Transistors DESCRIPTION Low Collector Saturation Voltage High Power Dissipation- P = 10W(Max)@T =25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier and switching, especially in hybrid integrated circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET... See More ⇒

 6.1. Size:295K  nec

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2SB1261-L

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 6.2. Size:268K  nec

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2SB1261-L

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 6.3. Size:579K  jiangsu

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2SB1261-L

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors TO-251-3L 2SB1261-Z TRANSISTOR (PNP) FEATURES 1. BASE High hFE Low VCE(sat) 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base V... See More ⇒

Detailed specifications: 2SB1132-P, 2SB1132-Q, 2SB1132-R, 2SB1188-P, 2SB1188-Q, 2SB1188-R, 2SB1197K-Q, 2SB1197K-R, 2SC5200, 2SB1261-M, 2SC1815C, 2SC1815D, 2SC1815E, 2SC1815Q, 2SC2412K-Q, 2SC2412K-R, 2SC2412K-S

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