2SC3585D Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3585D
SMD Transistor Code: R45
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.035 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10000(typ) MHz
Forward Current Transfer Ratio (hFE), MIN: 170
Noise Figure, dB: -
Package: SOT23
2SC3585D Transistor Equivalent Substitute - Cross-Reference Search
2SC3585D Datasheet (PDF)
2sc3585a 2sc3585b 2sc3585c 2sc3585d.pdf
2SC3585NPN2SC3585 NPN SOT-23-3L VHFUHF CATV :S21e2 5.5dB @ VCE=6VIC=
2sc3585.pdf
DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3585MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISORDESCRIPTIONPACKAGE DIMENSIONSThe 2SC3585 is an NPN epitaxial silicon transistor designed for use in(Units: mm)low-noise and small signal amplifiers from VHF band to UHF band. The2SC3585 features excellent power gain with very low-noise figures. The2.80.22SC3585 em
ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf
NEC's NPN SILICON HIGH NE680FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz LOW NOISE FIGURE:1.7 dB at 2 GHz2.6 dB at 4 GHz HIGH ASSOCIATED GAIN:12.5 dB at 2 GHz8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE00 (CHIP) 35 (MICRO-X)LOW CURRENT PERFORMANCEDESCRIPTIONNEC's NE680 series of NPN epitaxial silicon transistors isdesigned for l
2sc3585.pdf
SMD Type TransistorsNPN Transistors2SC3585SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=35mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect
2sc3585.pdf
isc Silicon NPN RF Transistor 2SC3585DESCRIPTIONCollector Current I = 35mACCollector-Emitter Breakdown Voltage-: V = 10V(Min)(BR)CEOHigh gain:2 S21e = 5.5 dB (typical) ( I =5mA,f=2GHz)CGain bandwidth productfT = 10 GHZ (typical) (I =10mA,f=1GH)CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
