2SC4901-D
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4901-D
SMD Transistor Code: YK
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1
W
Maximum Collector-Base Voltage |Vcb|: 15
V
Maximum Collector-Emitter Voltage |Vce|: 9
V
Maximum Emitter-Base Voltage |Veb|: 1.5
V
Maximum Collector Current |Ic max|: 0.05
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 7000
MHz
Forward Current Transfer Ratio (hFE), MIN: 170
Noise Figure, dB: -
Package:
SOT323
2SC4901-D
Transistor Equivalent Substitute - Cross-Reference Search
2SC4901-D
Datasheet (PDF)
7.1. Size:46K hitachi
2sc4901.pdf
2SC4901Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierFeatures High gain bandwidth productfT = 9 GHz Typ High gain, low noise figurePG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHzOutlineCMPAK311. Emitter2. Base23. Collector2SC4901Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollect
7.2. Size:228K inchange semiconductor
2sc4901.pdf
isc Silicon NPN RF Transistor 2SC4901DESCRIPTION High gain bandwidth productfT = 9 GHz (Typ) @ VCE=5VIC=20mAf=0.9GHz High gain, low noise figureS 2 = 13.5 dB @ VCE=5VIC=20mAf=0.9GHz,21eNF = 1.6dB( Typ ) @ VCE=5VIC=5mA f=0.9GHzMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUHF / VHF wide band ampl
7.3. Size:198K inchange semiconductor
2sc4901yk.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4901YKDESCRIPTIONHigh gain bandwidth productfT = 9 GHz (Typ) @ VCE=5VIC=20mAf=0.9GHzHigh gain, low noise figureS 2 = 13.5 dB @ VCE=5VIC=20mAf=0.9GHz,21eNF = 1.6dB( Typ ) @ VCE=5VIC=5mA f=0.9GHzMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
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