All Transistors. 858BW Datasheet

 

858BW Datasheet and Replacement


   Type Designator: 858BW
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5(max) pF
   Forward Current Transfer Ratio (hFE), MIN: 220
   Noise Figure, dB: -
   Package: SOT323
 

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858BW Datasheet (PDF)

 ..1. Size:688K  slkor
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858BW

BC856W-BC858WPlastic-Encapsulate TransistorsTRANSISTOR (PNP) FEATURES SOT-323 Ideally suited for automatic insertion For Switching and AF Amplifier Applications1. BASE 2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage BC856W -80VCBO V BC857W -50BC858W -30Collector-Emitter Voltage BC8

 0.1. Size:141K  rohm
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858BW

BC858BW / BC858B Transistors PNP General Purpose Transistor BC858BW / BC858B External dimensions (Unit : mm) Features 1) BVCEO

 0.2. Size:81K  rohm
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858BW

BC858BW / BC858BTransistorsPNP General Purpose TransistorBC858BW / BC858B External dimensions (Units : mm) Features1) BVCEO

 0.3. Size:140K  infineon
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858BW

BC856...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: DC5424 | BD828A | 2SAR554PFRA | AC847BWQ | 2SA1797Q | BUY38-5 | 2SA1840

Keywords - 858BW transistor datasheet

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