S8050TH Datasheet and Replacement

S8050T NPN Transistors Marking Marking J3Y 3 2 1.Base 2.Emitter 3.Collector 1 Simplified outline(SOT-523) Absolute Maximum Ratings Ta = 25 Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.2 W Tj Junction Temperature 150

S8050T NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free TO-92 FEATURES 4.55 0.2 3.5 0.2 (1.27 Typ.) Complimentary to S8550T 1.25 0.2 Collector Current IC = 0.5 A 1 2 3 2.54 0.1 1 Emitter 2 Base 3 Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25 C

SS8050T NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power dissipation PCM 1 W Collector Current ICM 1.5 A 1 Collector-base voltage 2 3 V(BR)CBO 40 V 1 2 3 Operating & storage junction temperature 1 O O Tj, Tstg - 55 C + 150 C 1. EMITTER 2 2. BASS 3 . COLLEC

S8050T TRANSISTOR (NPN) SOT-523 FEATURES Complimentary to S8550T 1. BASE Collector Current IC=0.5A 2. EMITTER 3. COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Diss

SS8050T23 NPN Transistor ROHS FEATURE NPN Transistor Collector Current IC=1.5A MARKING Y1 SOT-23 Absolute maximum ratings (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj