2SA1256E4 PDF and Equivalents Search

 

2SA1256E4 Specs and Replacement

Type Designator: 2SA1256E4

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 230 MHz

Collector Capacitance (Cc): 1.7 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: SOT323

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2SA1256E4 datasheet

 7.1. Size:162K  sanyo

2sa1256.pdf pdf_icon

2SA1256E4

Ordering number EN1056C PNP Epitaxial Planar Silicon Transistors 2SA1256 High Frequency Amp Applications Applications Package Dimensions Ideally suited for use in FM RF amplifiers, mixers, unit mm oscillators, converters, and IF amplifiers. 2018B [2SA1256] Features High fT (230MHz typ), and small Cre (1.1pF typ). Small NF (2.5dB typ). 1 Base 2 Emitter 3 Collecto... See More ⇒

 7.2. Size:1370K  kexin

2sa1256.pdf pdf_icon

2SA1256E4

SMD Type or SMD Type TransistICs PNP Transistors 2SA1256 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High fT (230MHz typ), and small Cre (1.1pF typ). 1 2 Small NF (2.5dB typ). +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter ... See More ⇒

 8.1. Size:249K  toshiba

2sa1255.pdf pdf_icon

2SA1256E4

2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused (PCT process) 2SA1255 High Voltage Switching Applications Unit mm High voltage VCBO = -200 V (min) V = -200 V (min) CEO Small package Complementary to 2SC3138 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -200 V Collector-emitter voltage VCEO -200 V... See More ⇒

 8.2. Size:41K  sanyo

2sa1253.pdf pdf_icon

2SA1256E4

Ordering number ENN1049E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1253/2SC3135 High-hFE, AF Amp Applications Features Package Dimensions High VEBO. unit mm Wide ASO and high durability against breakdown. 2033A [2SA1253/2SC3135] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 Emitter 2 Collector ( ) 2SA1253 3 Base 3.0 3.8 SANYO SPA Specifications Absolut... See More ⇒

Detailed specifications: 2SA1253T, 2SA1253U, 2SA1254, 2SA1255, 2SA1255O, 2SA1255Y, 2SA1256, 2SA1256E3, TIP127, 2SA1256E5, 2SA1257, 2SA1257G3, 2SA1257G4, 2SA1257G5, 2SA1258, 2SA1259, 2SA126

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