2SC3856O Specs and Replacement

Type Designator: 2SC3856O

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 130 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 180 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 typ MHz

Collector Capacitance (Cc): 300 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO3PN

 2SC3856O Substitution

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2SC3856O datasheet

 ..1. Size:430K  cn sptech

 2sc3856o 2sc3856p 2sc3856y.pdf pdf_icon

2SC3856O

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3856 DESCRIPTION High Collector-Emitter Breakdown Voltage- V =180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1492 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 200 V CBO V Collector... See More ⇒

 7.1. Size:179K  jmnic

 2sc3856.pdf pdf_icon

2SC3856O

JMnic Product Specification Silicon NPN Power Transistors 2SC3856 DESCRIPTION With TO-3PN package Complement to type 2SA1492 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT ... See More ⇒

 7.2. Size:24K  sanken-ele

 2sc3856.pdf pdf_icon

2SC3856O

2SC3856 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Symbol 2SC3856 Unit Conditions 2SC3856 Unit 0.2 4.8 0.4 15.6 ICBO 0.1 VCBO 200 V VCB=200V 100max A 9.6 2.0 IEBO VCEO 180 V VEB=6V 100max... See More ⇒

 7.3. Size:1824K  cn sps

 2sc3856t4tl.pdf pdf_icon

2SC3856O

2SC3856T4TL Silicon NPN Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V =180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1492 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 200 V CBO V Collector-Emitter Voltage 180 V CEO V E... See More ⇒

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Detailed specifications: 2SC3181O, 2SC3181R, 2SC3834G, 2SC3834O, 2SC3834Y, 2SC3835G, 2SC3835O, 2SC3835Y, 2SC945, 2SC3856P, 2SC3856Y, 2SC4467O, 2SC4467P, 2SC4467Y, 2SC4550K, 2SC4550L, 2SC4550M

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