2SC3856O Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3856O
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 130 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 180 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20(typ) MHz
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO3PN
2SC3856O Transistor Equivalent Substitute - Cross-Reference Search
2SC3856O Datasheet (PDF)
2sc3856o 2sc3856p 2sc3856y.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3856DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1492APPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 200 VCBOV Collector
2sc3856.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3856 DESCRIPTION With TO-3PN package Complement to type 2SA1492 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT
2sc3856.pdf
2SC3856Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)SymbolSymbol 2SC3856 Unit Conditions 2SC3856 Unit0.24.80.415.6ICBO 0.1VCBO 200 V VCB=200V 100max A 9.6 2.0IEBOVCEO 180 V VEB=6V 100max
2sc3856t4tl.pdf
2SC3856T4TLSilicon NPN Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1492APPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 200 VCBOV Collector-Emitter Voltage 180 VCEOV E
2sc3856.pdf
isc Silicon NPN Power Transistor 2SC3856DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1492Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
