2SC4467Y
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4467Y
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80
W
Maximum Collector-Base Voltage |Vcb|: 160
V
Maximum Collector-Emitter Voltage |Vce|: 120
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 8
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 20(typ)
MHz
Collector Capacitance (Cc): 200
pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package:
TO3PN
2SC4467Y
Transistor Equivalent Substitute - Cross-Reference Search
2SC4467Y
Datasheet (PDF)
..1. Size:403K cn sptech
2sc4467o 2sc4467p 2sc4467y.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2SC4467 DESCRIPTIONWith TO-3PN packageComplement to type 2SA1694APPLICATIONS Audio and general purposePINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UN
7.1. Size:169K utc
2sc4467.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC4467 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4467 is a silicon NPN triple diffused planar transistor, it uses UTCs advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SC4467 is suitable for audio an
7.2. Size:192K jmnic
2sc4467.pdf
JMnic Product SpecificationSilicon NPN Power Transistors 2SC4467 DESCRIPTION With TO-3PN package Complement to type 2SA1694 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITV
7.3. Size:24K sanken-ele
2sc4467.pdf
2SC4467Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4467 Unit Symbol Conditions 2SC4467 Unit0.24.80.415.60.1VCBO 160 V ICBO VCB=160V 10max A 9.6 2.0IEBOVCEO 120 V VEB=6V 10max
7.4. Size:194K inchange semiconductor
2sc4467.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4467DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1694100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MA
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