All Transistors. 2SC5027T1TL Datasheet

 

2SC5027T1TL Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC5027T1TL
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 15(typ) MHz
   Collector Capacitance (Cc): 60 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO220C

 2SC5027T1TL Transistor Equivalent Substitute - Cross-Reference Search

   

2SC5027T1TL Datasheet (PDF)

 ..1. Size:2005K  cn sps
2sc5027t1tl.pdf

2SC5027T1TL
2SC5027T1TL

2SC5027T1TLELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BV Emitter -Base Breakdown Voltage I = 1mA; I = 0 7 V EBO E CBV Collector- Emitter Breakdown Voltage I = 5mA; I = 0 800 V CEO C BBV Collector- Base Breakdown Voltage I = 1mA; I = 0 850 V CBO C ECollector-Emitter Saturation Voltage I = 1.5A; I = 0.3A 2.0 V

 7.1. Size:241K  toshiba
2sc5027.pdf

2SC5027T1TL
2SC5027T1TL

 7.2. Size:198K  utc
2sc5027e.pdf

2SC5027T1TL
2SC5027T1TL

UNISONIC TECHNOLOGIES CO., LTD 2SC5027E NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR . FEATURES * High Speed Switching * Wide SOA ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5027EL-x-TA3-T 2SC5027EL-x-TA3-T TO-220 B C E Tube2SC5027EL-x-TF2-T 2SC5027EL-x-TF2-T TO-220F2 B C E Tube2SC5027EL-

 7.3. Size:49K  utc
2sc5027.pdf

2SC5027T1TL
2SC5027T1TL

UNISONIC TECHNOLOGIES CO., LTD 2SC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY . 1 FEATURES TO-220* High Voltage (VCEO = 800V) * High Speed Switching * Wide SOA 1TO-220F*Pb-free plating product number: 2SC5027L ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 32SC5027-x-TA3-T 2SC5027L-x-TA3-T TO-

 7.4. Size:236K  nell
2sc5027af.pdf

2SC5027T1TL
2SC5027T1TL

RoHS 2SC5027 Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor3A/ 800V / 50WFEATURESHigh-speed switchingHigh breakdown voltage and high reliabilityCWide SOA (Safe Operation Area)TO-220 package which can be installed to the heat sink with one screwBBC APPLICATIONSCEESwitching regulator and general purposeTO-2

 7.5. Size:236K  nell
2sc5027a.pdf

2SC5027T1TL
2SC5027T1TL

RoHS 2SC5027 Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor3A/ 800V / 50WFEATURESHigh-speed switchingHigh breakdown voltage and high reliabilityCWide SOA (Safe Operation Area)TO-220 package which can be installed to the heat sink with one screwBBC APPLICATIONSCEESwitching regulator and general purposeTO-2

 7.6. Size:405K  cn sptech
2sc5027.pdf

2SC5027T1TL
2SC5027T1TL

 7.7. Size:213K  inchange semiconductor
2sc5027.pdf

2SC5027T1TL
2SC5027T1TL

isc Silicon NPN Power Transistor 2SC5027DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1100 VCBOV Collector-Emitter Voltage 800 VCEOV Emitter-Base Volt

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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