MJW0281AT4TL Specs and Replacement
Type Designator: MJW0281AT4TL
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 75
Package: TO3PN
MJW0281AT4TL Substitution
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MJW0281AT4TL datasheet
MJW0281AT4TL DESCRIPTION High DC current amplifier rate h 50-200@V = 5V,I = 1A FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power audio, disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 250 V CBO V Collector-Emitter V... See More ⇒
MJW0281A (NPN) MJW0302A (PNP) Preferred Devices Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJW3281A and MJW1302A audio output transistors. With superior gain linearity and safe operating area performance, these http //onsemi.com transistors are ideal for high fidelity audio amplifier output stages and other linea... See More ⇒
SPTECH Product Specification MJW0281A SPTECH Silicon NPN Power Transistor DESCRIPTION High DC current amplifier rate h 50-200@V = 5V,I = 1A FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power audio, disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒
Detailed specifications: 2SC5200T7TL, 2SC5570T7TL, BU406DT9TL, BU406T1TL, BU508AT4TL, BU941PT4TL, BU941TT1TL, FJL6920T7TL, 2SC2073, MJW0302AT4TL, MJW3281AT4TL, NJW0281GT4TL, NJW0302GT4TL, NJW1302GT4TL, NJW3281GT4TL, TIP35CT4TL, TIP36CT4TL
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History: 2SC6104
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