2SA1263NO Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1263NO
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 290 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO218
2SA1263NO Transistor Equivalent Substitute - Cross-Reference Search
2SA1263NO Datasheet (PDF)
2sa1263n.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1263N DESCRIPTION With TO-3P(I) package Complement to type 2SC3180N 2SA1263 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum ratings(Ta=25) S
2sa1263n.pdf
isc Silicon PNP Power Transistor 2SA1263NDESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -5ACE(sat) CGood Linearity of hFEComplement to Type 2SC3180NMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidelity audio frequencyamplifier output stage a
2sa1263.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sa1263.pdf
isc Silicon PNP Power Transistor 2SA1263DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -5ACE(sat) CGood Linearity of hFEComplement to Type 2SC3180Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidelity audio frequencyamplifier output stage app
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
