2SA1263NR Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1263NR
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 290 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO218
2SA1263NR Transistor Equivalent Substitute - Cross-Reference Search
2SA1263NR Datasheet (PDF)
2sa1263n.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1263N DESCRIPTION With TO-3P(I) package Complement to type 2SC3180N 2SA1263 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum ratings(Ta=25) S
2sa1263n.pdf
isc Silicon PNP Power Transistor 2SA1263NDESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -5ACE(sat) CGood Linearity of hFEComplement to Type 2SC3180NMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidelity audio frequencyamplifier output stage a
2sa1263.pdf
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2sa1263.pdf
isc Silicon PNP Power Transistor 2SA1263DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -5ACE(sat) CGood Linearity of hFEComplement to Type 2SC3180Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidelity audio frequencyamplifier output stage app
Datasheet: 2SA1259 , 2SA126 , 2SA1260 , 2SA1261 , 2SA1262 , 2SA1263 , 2SA1263N , 2SA1263NO , KTB688 , 2SA1264 , 2SA1264N , 2SA1264NO , 2SA1264NR , 2SA1265 , 2SA1265N , 2SA1265NO , 2SA1265NR .