All Transistors. MMBT9013-G Datasheet


MMBT9013-G Datasheet, Equivalent, Cross Reference Search

Type Designator: MMBT9013-G

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100(typ) MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT23

MMBT9013-G Transistor Equivalent Substitute - Cross-Reference Search


MMBT9013-G Datasheet (PDF)

 ..1. Size:492K  pjsemi
mmbt9013-g mmbt9013-h.pdf

MMBT9013-G MMBT9013-G

MMBT9013 NPN Transistor FeaturesSOT-23 (TO-236) For Switching and Amplifier Applications. As Complementary Type of the PNP TransistorMMBT9012 is Recommended.1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage V 40 V CBOCollector Emitter Voltage V

 6.1. Size:144K  utc

MMBT9013-G MMBT9013-G

UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total Power Dissipation. (625mW) *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Fre

 6.2. Size:179K  semtech


 6.3. Size:676K  semtech
mmbt9013g mmbt9013h.pdf

MMBT9013-G MMBT9013-G

MMBT9013 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012 is recommended. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5 VCollector Current IC 500 mAPo

 6.4. Size:138K  wej

MMBT9013-G MMBT9013-G

RoHS MMBT9013LT1NPN EPITAXIAL SILICON TRANSISTOR SOT-2331W OUTPUT AMPLIFIER OF PORTABLE1RADIOS IN CLASSB PUSH-PULL OPERATION21.1.BASE Complement to 90122.EMITTER Collector Current :Ic=500mA2.43.COLLECTOR1.3 High Total Power Dissipation Pc=225mW Unit:mmoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacteristicCollector-Base Voltage VCBO 40

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1837 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .


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