2SA1213O PDF and Equivalents Search

 

2SA1213O Specs and Replacement

Type Designator: 2SA1213O

SMD Transistor Code: NO

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120(typ) MHz

Collector Capacitance (Cc): 40 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: SC62

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2SA1213O datasheet

 ..1. Size:195K  toshiba

2sa1213o 2sa1213y.pdf pdf_icon

2SA1213O

2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (IC = -1 A) High speed switching time tstg = 1.0 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC2873 Absolut... See More ⇒

 0.1. Size:143K  comchip

2sa1213o-g.pdf pdf_icon

2SA1213O

General Purpose Transistor 2SA1213-G Series (PNP) RoHS Device Features 1 Base -Small flat package. 2 Collector SOT-89-3L 3 Emitter -Power amplifier and switching -applications. 0.181(4.60) 0.173(4.40) -Low saturation voltage. 0.061(1.55) REF. -High speed switching time. 0.102(2.60) 0.167(4.25) 0.091(2.30) 0.155(3.94) 1 2 3 Maximum Ratings (at TA=25 C unless other... See More ⇒

 7.1. Size:223K  toshiba

2sa1213.pdf pdf_icon

2SA1213O

2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (I C = -1 A) High speed switching time t = 1.0 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC2873 Max... See More ⇒

 7.2. Size:999K  mcc

2sa1213-o 2sa1213-y.pdf pdf_icon

2SA1213O

2SA1213-O/2SA1213-Y Electrical Characteristics @ 25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO -50 IC=-100 A, IE=0 Collector-Base Breakdown Voltage V V(BR)CEO -50 IC=-10mA, IB=0 Collector-Emitter Breakdown Voltag V V(BR)EBO -5 IE=-100 A, IC=0 Emitter-Base Breakdown Voltage V ICBO VCB=-50V, IE=0 Collector-Base Cutoff Current -0.1 A IEB... See More ⇒

Detailed specifications: MMBTSC945-L , MMDT2907ASG , MMDT3904SG , MMDT3906SG , MMBT3904H , MMBT3906H , 2SA1163BL , 2SA1163GR , 2SA1837 , 2SA1213Y , 2SA1362GR , 2SA1586-GR , 2SA1586-O , 2SA1586-Y , 2SA1587BL , 2SA1587GR , 2SA1588-GR .

History: BUV90F

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