All Transistors. 2SC4117GR Datasheet

 

2SC4117GR Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC4117GR
   SMD Transistor Code: DG
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100(typ) MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SC70

 2SC4117GR Transistor Equivalent Substitute - Cross-Reference Search

   

2SC4117GR Datasheet (PDF)

 ..1. Size:726K  toshiba
2sc4117gr 2sc4117bl.pdf

2SC4117GR
2SC4117GR

2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4117 Audio Frequency General Purpose Amplifier Applications Unit: mm AEC-Q101 Qualified (Note1) High voltage: V = 120 V CEO Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200 to 700 FE: FE Low noise: NF = 1dB (typ.), 10dB (max) Complemen

 7.1. Size:334K  toshiba
2sc4117.pdf

2SC4117GR
2SC4117GR

2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4117 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = 120 V Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200~700 FE: FE Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1587 Small package

 7.2. Size:1663K  kexin
2sc4117.pdf

2SC4117GR
2SC4117GR

SMD Type TransistorsNPN Transistors2SC4117 Features High voltage: VCEO = 120 V High hFE: hFE = 200~700 Low noise: NF = 1dB (typ.), 10dB (max) Small package Complementary to 2SA15871 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120

 8.1. Size:213K  toshiba
2sc4118.pdf

2SC4117GR
2SC4117GR

2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4118 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) Complementary to 2SA1588 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollec

 8.2. Size:318K  toshiba
2sc4116.pdf

2SC4117GR
2SC4117GR

2SC4116 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4116 Audio Frequency General Purpose Amplifier Applications Unit: mmHigh voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 70~700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1586

 8.3. Size:382K  toshiba
2sc4116-o 2sc4116-y 2sc4116-gr 2sc4116-bl.pdf

2SC4117GR
2SC4117GR

2SC4116 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4116 Audio Frequency General Purpose Amplifier Applications Unit: mm AEC-Q101 Qualified (Note1) High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h : h = 70 to 700 FE FE Low noise: NF = 1dB

 8.4. Size:88K  sanyo
2sa1582 2sc4113.pdf

2SC4117GR
2SC4117GR

 8.5. Size:38K  sanyo
2sc4119.pdf

2SC4117GR
2SC4117GR

Ordering number:EN2548BNPN Triple Diffused Planar Silicon Darlington Transistor2SC4119800V/15A Driver ApplicationsApplications Package Dimensions Induction cookers.unit:mm High-voltage , high-power switching.2048A[2SC4119]Features High speed (adoption of MBIT process). High breakdown voltage (VCBO=1500V). On-chip damper diode. High reliability.E :

 8.6. Size:108K  sanyo
2sc4110.pdf

2SC4117GR
2SC4117GR

Ordering number:EN2475BNPN Triple Diffused Planar Silicon Transistor2SC4110400V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2022A Wide ASO.[2SC4110] Adoption of MBIT process.15.63.24.814.02.01.61.42.00.61.01 2 31 : Base0.62 : Collector3 : E

 8.7. Size:159K  rohm
2sc4115s.pdf

2SC4117GR
2SC4117GR

Low Frequency Transistor (20V, 3A) 2SC4115S Features Dimensions(Unit:mm) 1) Low VCE(sat). 2SC4115SVCE(sat) = 0.2V(Typ.) IC / IB = 2A / 0.1A 40.2 20.22) Excellent current gain characteristics. 3) Complements the 2SA1585S. Structure 0.45+0.15-0.05Epitaxial planar type NPN silicon transistor 0.45+0.152.5+0.4 0.5 -0.05-0.15 Absolute maximum ratings (Ta

 8.8. Size:331K  mcc
2sc4116-y.pdf

2SC4117GR
2SC4117GR

2SC4116-OMCC2SC4116-YMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4116-GRMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4116-BLFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information)Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur

 8.9. Size:331K  mcc
2sc4116-bl.pdf

2SC4117GR
2SC4117GR

2SC4116-OMCC2SC4116-YMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4116-GRMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4116-BLFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information)Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur

 8.10. Size:331K  mcc
2sc4116-o.pdf

2SC4117GR
2SC4117GR

2SC4116-OMCC2SC4116-YMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4116-GRMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4116-BLFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information)Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur

 8.11. Size:307K  mcc
2sc4115s-q.pdf

2SC4117GR
2SC4117GR

MCC2SC4115S-QMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4115S-RMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4115S-SFax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingNPN Moisture Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Plastic-EncapsulateRoHS Compliant. See orderin

 8.12. Size:331K  mcc
2sc4116-gr.pdf

2SC4117GR
2SC4117GR

2SC4116-OMCC2SC4116-YMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4116-GRMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4116-BLFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information)Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisur

 8.13. Size:56K  panasonic
2sc4111.pdf

2SC4117GR
2SC4117GR

Power Transistors2SC4111Silicon NPN triple diffusion planar typeFor horizontal deflection outputUnit: mm 3.3 0.220.0 0.5 5.0 0.33.0FeaturesHigh-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO) 1.5Satisfactory linearity of foward current transfer ratio hFE1.52.0 0.3Absolute Maximum Ratings (TC=25C)2.7 0.33.0 0

 8.14. Size:71K  secos
2sc4115.pdf

2SC4117GR

2SC4115 3A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 General Purpose Application Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 123B C AE CLASSIFICATION OF hFE(1) ECProduct-Rank 2SC4115-Q 2SC4115-R 2SC411

 8.15. Size:160K  secos
2sc4116.pdf

2SC4117GR
2SC4117GR

2SC4116 0.15A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURES High voltage and high current. A Excellent hFE linearity. L3 High hFE. 3Top View C B Low noise. 11 2 Complementary to 2SA1586 2K EDCLASSIFICATION OF hFE H JF GP

 8.16. Size:1602K  jiangsu
2sc4115.pdf

2SC4117GR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 1 Excellent current gain characteristics. 2 2. COLLECTOR Complements to 2SA1585 3 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter

 8.17. Size:464K  jiangsu
2sc4115s.pdf

2SC4117GR
2SC4117GR

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate TransistorsTO 92S 2SC4115S TRANSISTOR (NPN)1. EMITTERFEATURES 2. COLLECTOR Low VCE(sat).3. BASE Excellent Current Gain Characteristics.123 Complements The 2SA1585S. Equivalent Circuit C4115S=Device code C4115Solid dot = Green molding compound device, -if none, the norma

 8.18. Size:837K  jiangsu
2sc4116.pdf

2SC4117GR
2SC4117GR

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate TransistorsSOT-323 2SC4116 TRANSISTOR (NPN)FEATURES High voltage and high current1. BASE Excellent hFE linearity2. EMITTER High hFE3. COLLECTOR Low noise Complementary to 2SA1586MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V

 8.19. Size:1392K  htsemi
2sc4115.pdf

2SC4117GR
2SC4117GR

2SC4115 TRANSISTOR (NPN)SOT-89 FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 1. BASE 1 Excellent current gain characteristics. 2 Complements to 2SA1585 2. COLLECTOR 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitsVCBO 40 VCollector-Base Voltage VCEO 20 VCollector-Emitter Voltage VEBO 6 V

 8.20. Size:834K  htsemi
2sc4116.pdf

2SC4117GR
2SC4117GR

2SC4116 TRANSISTOR (NPN)SOT-323 FEATURES High voltage and high current Excellent hFE linearity High hFE Low noise 1. BASE Complementary to 2SA1586 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 VIC Coll

 8.21. Size:1152K  lge
2sc4115.pdf

2SC4117GR
2SC4117GR

2SC4115 SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.6B 4.41.61.82 1.41.43. EMITTER 3 2.64.252.43.75Features 0.8MIN0.53Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) 0.400.480.442x)0.13 B0.35 0.37 Excellent current gain characteristics. 1.53.0 Complements to 2SA1585 Dimensions in inches and (millimeter

 8.22. Size:276K  lge
2sc4116 sot-323.pdf

2SC4117GR
2SC4117GR

2SC4116 SOT-323 Transistor(NPN)SOT-3231. BASE 2. EMITTER 3. COLLECTOR Features High voltage and high current Excellent hFE linearity High hFE Low noise Complementary to 2SA1586 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50

 8.23. Size:202K  wietron
2sc4116.pdf

2SC4117GR
2SC4117GR

2SC4116General Purpose TransistorCOLLECTOR33NPN SiliconP b Lead(Pb)-Free112BASE2SOT-323(SC-70)FEATURES EMITTER* High voltage and high current * Excellent hFE linearity * High hFE* Low noise * Complementary to 2SA1586 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 60 VCollector-Emitter Voltage

 8.24. Size:249K  nell
2sc4110b.pdf

2SC4117GR
2SC4117GR

RoHS 2SC4110B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor25A/400V Switching Regulator Applications15.60.44.80.29.62.00.13.20,1TO-3P(B)23FEATURES+0.2+0.20.651.05-0.1-0.1High-speed switchingHigh breakdown voltage and high reliability5.450.1 5.450.11.4Wide SOA (Safe Operation Area)

 8.25. Size:993K  kexin
2sc4118.pdf

2SC4117GR
2SC4117GR

SMD Type TransistorsNPN Transistors2SC4118 Features Excellent hFE linearity:: hFE(2)=25(min) Complementary to 2SA15881 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500mA Ba

 8.26. Size:296K  kexin
2sc4115.pdf

2SC4117GR

SMD Type TransistorsNPN Transistors2SC41151.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=20V Complements to 2SA15850.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V Emitter - Base

 8.27. Size:1131K  kexin
2sc4116.pdf

2SC4117GR
2SC4117GR

SMD Type TransistorsNPN Transistors2SC4116 Features High voltage and high current High hFE: hFE = 70~700 Low noise: NF = 1dB (typ.), 10dB (max) Small package Complementary to 2SA15861 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50

 8.28. Size:386K  lzg
2sc4115s-r.pdf

2SC4117GR
2SC4117GR

2SC4115S(3DG4115S) NPN /SILICON NPN TRANSISTOR :/Purpose: Low frequency amplifier. : 2SA1585S(3CG1585S) Features: Low V ,excellent current gain characteristicscomplementary pair with CE(sat)2SA1585S(3CG1585S). /Absolute maximum ratings(Ta=25)

 8.29. Size:386K  lzg
2sc4115s-s.pdf

2SC4117GR
2SC4117GR

2SC4115S(3DG4115S) NPN /SILICON NPN TRANSISTOR :/Purpose: Low frequency amplifier. : 2SA1585S(3CG1585S) Features: Low V ,excellent current gain characteristicscomplementary pair with CE(sat)2SA1585S(3CG1585S). /Absolute maximum ratings(Ta=25)

 8.30. Size:157K  sunroc
2sc4115c.pdf

2SC4117GR

SUNROC2SC4115S TRANSISTOR (NPN) TO-92S FEATURES 1. EMITTER Power dissipation PD: 0.3 W (Tamb=25) 2. COLLECTOR Collector current I CM: 3 A 3. BASE Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Sy

 8.31. Size:1290K  cn sps
2sc4110t4tl.pdf

2SC4117GR
2SC4117GR

2SC4110T4TLSilicon NPN Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Volta

 8.32. Size:183K  cn sptech
2sc4110l 2sc4110m 2sc4110n.pdf

2SC4117GR
2SC4117GR

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC4110DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 V

 8.33. Size:112K  inchange semiconductor
2sc4110-f2.pdf

2SC4117GR
2SC4117GR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4110 DESCRIPTION With TO-3 package Fast switching speed Wide area of safe operation High voltage,high reliability APPLICATIONS For switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE

 8.34. Size:212K  inchange semiconductor
2sc4116.pdf

2SC4117GR
2SC4117GR

isc Silicon NPN Power Transistor 2SC4116DESCRIPTIONWith SOT-323 packagingHigh collector-base voltageHigh power dissipationLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBO

 8.35. Size:211K  inchange semiconductor
2sc4111.pdf

2SC4117GR
2SC4117GR

isc Silicon NPN Power Transistor 2SC4111DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 8.36. Size:226K  inchange semiconductor
2sc4110.pdf

2SC4117GR
2SC4117GR

isc Silicon NPN Power Transistor 2SC4110DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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