2SC5066Y Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5066Y
SMD Transistor Code: M2
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 5000 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SC70
2SC5066Y Transistor Equivalent Substitute - Cross-Reference Search
2SC5066Y Datasheet (PDF)
2sc5066ft.pdf
2SC5066FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3
2sc5066.pdf
2SC5066 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB
2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf
2sc5064.pdf
2SC5064 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5064 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB
2sc5065.pdf
2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VB
2sc5069.pdf
Ordering number:EN4509NPN Epitaxial Planar Silicon Transistor2SC5069Low-Frequency General-Purpose Amplifier,Driver ApplicationsFeatures Package Dimensions High current capacity.unit:mm Adoption of MBIT process.2038A High DC current gain.[2SC5069] Low collector-to-emitter saturation voltage.4.5 High VEBO.1.51.60.4 0.53 2 10.41.53.01 : Ba
2sc5060.pdf
2SC5060TransistorsPower transistor (9010V, 3A)2SC5060 External dimensions (Units : mm) Features1) Built-in zener diode between collector and base.2) Zener diode has low voltage dispersion.2.56.83) Strong protection against reverse power surges due to Lloads.4) Darlington connection for high DC current gain.0.65Max.5) Built-in resistor between base and emitter
2sc5063.pdf
Power Transistors2SC5063Silicon NPN triple diffusion planar typeUnit: mm8.5 0.2 3.4 0.3For high breakdown voltage high-speed switching6.0 0.5 1.0 0.1Features1.5max. 1.1max.High-speed switchingHigh collector to base voltage VCBO0.8 0.1 0.5max.Wide area of safe operation (ASO)2.54 0.3N type package enabling direct soldering of the radiating fin to5.08 0
2sc5069.pdf
SMD Type TransistorsNPN Transistors2SC5069SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=25V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO
2sc5064.pdf
SMD Type TransistorsNPN Transistors2SC5064SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=12V1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec
2sc5064.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5064DESCRIPTIONLow Noise and High GainNF = 1.1 dB TYP., S 2= 12 dB TYP.21e@V = 5 V, f = 1.0 GHzCE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF~UHF band low noise amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25
2sc5065.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5065DESCRIPTIONLow Noise and High GainNF = 1.1 dB TYP., S 2= 12 dB TYP.21e@V = 5 V, f = 1.0 GHzCE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF~UHF band low noise amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , C3198 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
