2SC6026MFV-GR PDF and Equivalents Search

 

2SC6026MFV-GR Specs and Replacement

Type Designator: 2SC6026MFV-GR

SMD Transistor Code: HG

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 0.95 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: VESM

 2SC6026MFV-GR Substitution

- BJT ⓘ Cross-Reference Search

 

2SC6026MFV-GR datasheet

 ..1. Size:162K  toshiba

 2sc6026mfv-y 2sc6026mfv-gr.pdf pdf_icon

2SC6026MFV-GR

2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit mm 1.2 0.05 High voltage and high current VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE hFE = 120 to 400 1 Complementary to 2SA2154MFV 3 2 ... See More ⇒

 4.1. Size:147K  toshiba

 2sc6026mfv.pdf pdf_icon

2SC6026MFV-GR

2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit mm 1.2 0.05 High voltage and high current VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE hFE = 120 to 400 1 Complementary to 2SA2154MFV 3 2 ... See More ⇒

 7.1. Size:142K  toshiba

 2sc6026.pdf pdf_icon

2SC6026MFV-GR

2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026 General-Purpose Amplifier Applications Unit mm High voltage and high current VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 120 400 Complementary to 2SA2154 1 3 Absolute Maximum Ratings (Ta = 25 C) 2 ... See More ⇒

 7.2. Size:145K  toshiba

 2sc6026ct.pdf pdf_icon

2SC6026MFV-GR

2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC6026CT General Purpose Amplifier Applications Unit mm 0.6 0.05 High voltage and high current 0.5 0.03 VCEO = 50V, IC = 100mA (max) Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) High hFE hFE = 120 to 400 Complementary to 2SA2154CT Absolut... See More ⇒

SHOW MORE

Detailed specifications: 2SC4117BL , 2SC4117GR , 2SC4213-A , 2SC4213-B , 2SC5066O , 2SC5066Y , 2SC5084O , 2SC5084Y , TIP2955 , 2SC6026MFV-Y , HN1A01FE-GR , HN1A01FE-Y , HN1B04FE-GR , HN1B04FE-Y , 2N25550 , 2N25551 , 2SA1015G .

Keywords - 2SC6026MFV-GR pdf specs

 2SC6026MFV-GR cross reference

 2SC6026MFV-GR equivalent finder

 2SC6026MFV-GR pdf lookup

 2SC6026MFV-GR substitution

 2SC6026MFV-GR replacement

 

 

 


 
↑ Back to Top
.