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2N25550 Specs and Replacement

Type Designator: 2N25550

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6(max) pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO92

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2N25550 datasheet

 ..1. Size:151K  semtech

 2n25550 2n25551.pdf pdf_icon

2N25550

2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors 2N5400 and 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C)... See More ⇒

Detailed specifications: 2SC5084O , 2SC5084Y , 2SC6026MFV-GR , 2SC6026MFV-Y , HN1A01FE-GR , HN1A01FE-Y , HN1B04FE-GR , HN1B04FE-Y , 2SD669 , 2N25551 , 2SA1015G , 2SA1015O , 2SA1015Y , 2SA733L , 2SA733O , 2SA733Y , 2SC1815G .

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