2SA733O Specs and Replacement
Type Designator: 2SA733O
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 2.8 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO92
2SA733O Substitution
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2SA733O datasheet
2sa733r 2sa733o 2sa733y 2sa733p 2sa733l.pdf ![]()
2SA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor 2SC945 is recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base ... See More ⇒
September 2009 2SA733 PNP General Purpose Amplifier Features This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. TO-92 1 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings* TA=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Volta... See More ⇒
UNISONIC TECHNOLOGIES CO., LTD 2SA733 PNP SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is a low frequency amplifier. FEATURES * Collector-emitter voltage BVCEO=-50V * Collector current up to -150mA * High hFE linearity * Complimentary to 2SC945 ORDERING INFORMATION Ordering Number Pin Assignment ... See More ⇒
Detailed specifications: HN1B04FE-GR, HN1B04FE-Y, 2N25550, 2N25551, 2SA1015G, 2SA1015O, 2SA1015Y, 2SA733L, 2SC828, 2SA733Y, 2SC1815G, 2SC4379U-O, 2SC4379U-Y, 2SC4672U-H4031, 8050B, 8050D, 8050E
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