8050U-C Specs and Replacement

Type Designator: 8050U-C

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 9 typ pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT89

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8050U-C datasheet

 ..1. Size:232K  semtech

 8050u-c 8050u-d.pdf pdf_icon

8050U-C

8050U NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. Absolute Maximum Ratings (Ta = 25 ) Symbol Value Unit Parameter Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 1.5 A Power Dissipation Ptot 625 m... See More ⇒

Detailed specifications: 2SA733Y, 2SC1815G, 2SC4379U-O, 2SC4379U-Y, 2SC4672U-H4031, 8050B, 8050D, 8050E, A42, 8050U-D, 8550B, 8550D, 8550E, 9012I, 9013I, 9014A, 9014B

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