9013I Datasheet, Equivalent, Cross Reference Search
Type Designator: 9013I
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: TO92
9013I Transistor Equivalent Substitute - Cross-Reference Search
9013I Datasheet (PDF)
9013g 9013h 9013i.pdf
9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the PNP transistor 9012 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsol
s9013h s9013g s9013i.pdf
MCCS9013-GTM Micro Commercial Components20736 Marilla Street Chatsworth S9013-HMicro Commercial ComponentsCA 91311S9013-IPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 0.5A Collector-base Voltage 40VTransistors Operating and
s9013d s9013e s9013f s9013g s9013h s9013i s9013j.pdf
S9013TRANSISTOR (NPN) FEATURES Complementary to S90121. EMITTER Excellent hFE linearity2. BASE3. COLLECTOREquivalent Circuit Collector-Base Voltage 40 V Collector-Emitter Voltage 25 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.5 A Co
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: A5T4126
