All Transistors. MMBT9014C1 Datasheet

 

MMBT9014C1 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MMBT9014C1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6(max) pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO236

 MMBT9014C1 Transistor Equivalent Substitute - Cross-Reference Search

   

MMBT9014C1 Datasheet (PDF)

 ..1. Size:78K  semtech
mmbt9014c1.pdf

MMBT9014C1 MMBT9014C1

MMBT9014C1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 50 VCollector Emitter Voltage VCEO 45 VEmitter Base Voltage VEBO

 5.1. Size:66K  semtech
mmbt9014b mmbt9014c mmbt9014d.pdf

MMBT9014C1 MMBT9014C1

MMBT9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 50 VCollector Emitter Voltage VCEO 45 VEmitter Base Voltage VEBO 5 VCollector Current IC 100 mA

 6.1. Size:172K  utc
mmbt9014.pdf

MMBT9014C1 MMBT9014C1

UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE 3 FEATURES * High Total Power Dissipation. (450mW) 1* Excellent hFE Linearity. 2* Complementary to UTC MMBT9015 SOT-23(JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT9014G-x-AE3-R SOT-23 E B C Tape ReelNote: Pin

 6.2. Size:136K  wej
mmbt9014lt1.pdf

MMBT9014C1 MMBT9014C1

RoHS MMBT9014LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-233PRF-AMPLIFIER,LOW LEVEL&LOW NOISE1 Complemen to MMPT9015LT1 Collector-current:Ic=100mA 2 Collector-Emiller Voltage:VCE=45V1.1.BASE High Totalpower Dissipation Pc=225mW2.EMITTER High life And Good Linearity2.43.COLLECTOR1.3Unit:mmoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacterist

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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