All Transistors. MMBTSC945Y Datasheet

 

MMBTSC945Y Datasheet and Replacement


   Type Designator: MMBTSC945Y
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300(typ) MHz
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO236
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MMBTSC945Y Datasheet (PDF)

 ..1. Size:130K  semtech
mmbtsc945r mmbtsc945o mmbtsc945y mmbtsc945p mmbtsc945l.pdf pdf_icon

MMBTSC945Y

MMBTSC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA733 is recommended. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO

 5.1. Size:710K  pjsemi
mmbtsc945-l mmbtsc945-h.pdf pdf_icon

MMBTSC945Y

MMBTSC945 NPN Transistor SOT-23 Features (TO-236) Excellent hFE Linearity Low noise1.Base 2.Emitter 3.CollectorMarking: CRAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBOCollector Emitter Voltage V 50 V CEOEmitter Base Voltage V 5 V EBOCollector Curr

 8.1. Size:282K  semtech
mmbtsc4098w.pdf pdf_icon

MMBTSC945Y

MMBTSC4098W NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 5 VCollector Current IC 50 mA Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C

 8.2. Size:141K  semtech
mmbtsc1815o mmbtsc1815y mmbtsc1815g mmbtsc1815l.pdf pdf_icon

MMBTSC945Y

MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: H2N5551 | MP41A | PHD13005 | 2SD882-O | 2SC984H | 2SD2353 | MP4049

Keywords - MMBTSC945Y transistor datasheet

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