MRF3106 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF3106
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.6 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 22 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1600 MHz
Collector Capacitance (Cc): 5.5(max) pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: CASE305A-01
MRF3106 Transistor Equivalent Substitute - Cross-Reference Search
MRF3106 Datasheet (PDF)
mrf3104 mrf3105 mrf3106.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3104/DThe RF LineMRF3104Microwave LinearMRF3105Power TransistorsMRF3106 Designed for Class A, Common Emitter Linear Power Amplifiers. Specified 20 Volt, 1.6 GHz Characteristics:MRF3104 MRF3105 MRF31068.012 dB GAINOutput Power0.5 W 0.8 W 1.6 W1.551.65 GHzPower Gain 10.5 dB 9 dB 8 dBMICROW
mrf3104r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF3104/DThe RF LineMRF3104Microwave LinearMRF3105Power TransistorsMRF3106 Designed for Class A, Common Emitter Linear Power Amplifiers. Specified 20 Volt, 1.6 GHz Characteristics:MRF3104 MRF3105 MRF31068.012 dB GAINOutput Power0.5 W 0.8 W 1.6 W1.551.65 GHzPower Gain 10.5 dB 9 dB 8 dBMICROW
mrf316rev7.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF316/DThe RF LineNPN SiliconMRF316RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 80 Watts80 W, 3.0200 MHzMinimum Gain = 10 dBCONTROLLED QBROADBAND RF POWE
mrf314.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF314/DThe RF LineNPN SiliconMRF314RF Power Transistors. . . designed primarily for wideband largesignal driver and output amplifierstages in the 30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 30 Watts30 W, 30200 MHzMinimum Gain = 10 dBRF POWER 100% Tested
mrf316.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF316/DThe RF LineNPN SiliconMRF316RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 80 Watts80 W, 3.0200 MHzMinimum Gain = 10 dBCONTROLLED QBROADBAND RF POWE
mrf316re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF316/DThe RF LineNPN SiliconMRF316RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 80 Watts80 W, 3.0200 MHzMinimum Gain = 10 dBCONTROLLED QBROADBAND RF POWE
mrf314re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF314/DThe RF LineNPN SiliconMRF314RF Power Transistors. . . designed primarily for wideband largesignal driver and output amplifierstages in the 30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 30 Watts30 W, 30200 MHzMinimum Gain = 10 dBRF POWER 100% Tested
mrf317rev7.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF317/DThe RF LineNPN SiliconMRF317RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 100 W100 W, 30200 MHzMinimum Gain = 9.0 dBCONTROLLED QBROADBAND RF POWER Built
mrf317.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF317/DThe RF LineNPN SiliconMRF317RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 100 W100 W, 30200 MHzMinimum Gain = 9.0 dBCONTROLLED QBROADBAND RF POWER Built
mrf317re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF317/DThe RF LineNPN SiliconMRF317RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 100 W100 W, 30200 MHzMinimum Gain = 9.0 dBCONTROLLED QBROADBAND RF POWER Built
mrf313re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF313/DThe RF LineNPN SiliconMRF313High-Frequency Transistor. . . designed for wideband amplifier, driver or oscillator applications in military,mobile, and aircraft radio. Specified 28 Volt, 400 MHz Characteristics Output Power = 1.0 Watt1.0 W, 400 MHzPower Gain = 15 dB MinHIGHFREQUENCYEfficiency
mrf313.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF313/DThe RF LineNPN SiliconMRF313High-Frequency Transistor. . . designed for wideband amplifier, driver or oscillator applications in military,mobile, and aircraft radio. Specified 28 Volt, 400 MHz Characteristics Output Power = 1.0 Watt1.0 W, 400 MHzPower Gain = 15 dB MinHIGHFREQUENCYEfficiency
mrf314.pdf
MRF314 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 05202009 30W, 30-200MHz, 28V Designed primarily for wideband largesignal driver and output Product Image amplifier stages in the 30200 MHz frequency range. Guaranteed performance at 150 MHz, 28 Vdc Output power = 30 W Minimum gain = 10 dB 100% tested for load mismatch at all ph
mrf315a.pdf
HG RF POWER TRANSISTORMRF315ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION:PACKAGE STYLE .380 4L STUDThe HG MRF315A is Designed for.112x45 AClass C Power Amplifier ApplicationsCup to 200 MHz.BE EFEATURES:C PG = 9.0 dB min. at 45 W/ 150 MHzB Withstands 30:1 Load VSWRIOmnigold Metalization System D HJMAXIMUM RATINGSG
mrf314a.pdf
HG RF POWER TRANSISTORMRF314ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION:PACKAGE STYLE .380 4L FLGThe MRF314A is Designed for .112 x 45BAFEATURES: .125 NOM.FULL RJ.125 Omnigold Metalization System C D E MAXIMUM RATINGSFIHGIC 9.0 A MINIMUM MAXIMUMVCBO 65 VDIMinches / mm inches / mm.220 / 5
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
