BC858BWQ Specs and Replacement

Type Designator: BC858BWQ

SMD Transistor Code: 3K

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 220

Noise Figure, dB: -

Package: SOT23

 BC858BWQ Substitution

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BC858BWQ datasheet

 ..1. Size:253K  cn yangzhou yangjie elec

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BC858BWQ

RoHS RoHS COMPLIANT COMPLIANT BC856AWQ THRU BC858CWQ PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications PNP General purpose switching and amplification Mechanical Data Case SOT-323 Terminals Tin plated ... See More ⇒

 7.1. Size:141K  rohm

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BC858BWQ

BC858BW / BC858B Transistors PNP General Purpose Transistor BC858BW / BC858B External dimensions (Unit mm) Features 1) BVCEO ... See More ⇒

 7.2. Size:81K  rohm

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BC858BWQ

BC858BW / BC858B Transistors PNP General Purpose Transistor BC858BW / BC858B External dimensions (Units mm) Features 1) BVCEO ... See More ⇒

 7.3. Size:140K  infineon

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BC858BWQ

BC856...-BC860... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 20... See More ⇒

Detailed specifications: BC857AWQ, BC857BQ, BC857BWQ, BC857CQ, BC857CWQ, BC858AQ, BC858AWQ, BC858BQ, 2SB817, BC858CQ, BC858CWQ, BCB57BW, BCX56-16Q, MMBT2222AQ, MMBT2907AQ, MMBT4401Q, MMBT5401Q

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