All Transistors. BA15N23A Datasheet

 

BA15N23A Datasheet and Replacement


   Type Designator: BA15N23A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 130 W
   Maximum Collector-Emitter Voltage |Vce|: 230 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Collector Capacitance (Cc): 145 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO-3PB
      - BJT Cross-Reference Search

   

BA15N23A Datasheet (PDF)

 ..1. Size:523K  jilin sino
 ba15n23a ba15p23a.pdf pdf_icon

BA15N23A

Power Amplifier Applications Bipolar Transistortors RBA15N23A BA15P23A APPLICATIONS High fidelity audio amplifier Series Regulator General Purpose FEATURES V =230V (min) High collector voltageV =230V

 8.1. Size:1176K  jilin sino
 ba15n26b ba15p26b.pdf pdf_icon

BA15N23A

Complementary NPN-PNP Power Bipolar Transistor R BA15N26B(NPN) BA15P26B(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =260V (min) High collector voltageV =260V (min) CEO CEONPN-PNP Complementary NPN

 8.2. Size:551K  jilin sino
 ba15n26a ba15p26a.pdf pdf_icon

BA15N23A

Power Amplifier Applications Bipolar Transistortor RBA15N26A BA15P26A APPLICATIONS High fidelity audio amplifier Series Regulator General Purpose FEATURES V =260V (min) High collector voltageV =260V (

 9.1. Size:1071K  cn marching-power
 mpbp15n65ef mpba15n65ef mpbc15n65ef.pdf pdf_icon

BA15N23A

MPBX15N65EF650V-15A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to Motor Drivespositive temperature coefficient in VCEsat Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionGCTO-220EType Marking Package CodeCMPBP15N65EF MP15N65EF TO-220-3MPBA15N65EF MP15N

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Keywords - BA15N23A transistor datasheet

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