BA15N26B
Datasheet, Equivalent, Cross Reference Search
Type Designator: BA15N26B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200
W
Maximum Collector-Base Voltage |Vcb|: 260
V
Maximum Collector-Emitter Voltage |Vce|: 260
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 15
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 30
MHz
Collector Capacitance (Cc): 600(max)
pF
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package:
TO-3PB
TO3PL
BA15N26B
Transistor Equivalent Substitute - Cross-Reference Search
BA15N26B
Datasheet (PDF)
..1. Size:1176K jilin sino
ba15n26b ba15p26b.pdf
Complementary NPN-PNP Power Bipolar Transistor R BA15N26B(NPN) BA15P26B(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =260V (min) High collector voltageV =260V (min) CEO CEONPN-PNP Complementary NPN
7.1. Size:551K jilin sino
ba15n26a ba15p26a.pdf
Power Amplifier Applications Bipolar Transistortor RBA15N26A BA15P26A APPLICATIONS High fidelity audio amplifier Series Regulator General Purpose FEATURES V =260V (min) High collector voltageV =260V (
8.1. Size:523K jilin sino
ba15n23a ba15p23a.pdf
Power Amplifier Applications Bipolar Transistortors RBA15N23A BA15P23A APPLICATIONS High fidelity audio amplifier Series Regulator General Purpose FEATURES V =230V (min) High collector voltageV =230V
9.1. Size:1071K cn marching-power
mpbp15n65ef mpba15n65ef mpbc15n65ef.pdf
MPBX15N65EF650V-15A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to Motor Drivespositive temperature coefficient in VCEsat Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionGCTO-220EType Marking Package CodeCMPBP15N65EF MP15N65EF TO-220-3MPBA15N65EF MP15N
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