All Transistors. 2SC3357-E Datasheet

 

2SC3357-E Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC3357-E
   SMD Transistor Code: RE
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 6500(typ) MHz
   Forward Current Transfer Ratio (hFE), MIN: 125
   Noise Figure, dB: -
   Package: SOT89

 2SC3357-E Transistor Equivalent Substitute - Cross-Reference Search

   

2SC3357-E Datasheet (PDF)

 ..1. Size:625K  cn evvo
2sc3357-f 2sc3357-e.pdf

2SC3357-E
2SC3357-E

2SC3357 SMD Ty p e NPN Transistors3 Features2 Low noise and high gain1 1.Base High power gain2.Collector Large Ptot3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Contin

 7.1. Size:257K  nec
ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf

2SC3357-E
2SC3357-E

NEC's NPN SILICON HIGH NE856FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT:fT = 7 GHz LOW NOISE FIGURE:1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION35 (MICRO-X)00 (CHIP) LOW COSTDESCRIPTIONNEC's NE856 series of NPN epitaxial silicon transistors isdesigned for low cost amplifier and oscillator application

 7.2. Size:77K  nec
2sc3357.pdf

2SC3357-E
2SC3357-E

DATA SHEETSILICON TRANSISTOR2SC3357NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC3357 is an NPN silicon epitaxial transistor designed for(Unit: mm)low noise amplifier at VHF, UHF and CATV band.It has large dynamic range and good current characteristic.4.50.11.50.11.60.2FEATURES Low Noise and High GainNF = 1.1 dB TYP.,

 7.3. Size:1019K  kexin
2sc3357.pdf

2SC3357-E
2SC3357-E

SMD Type TransistorsNPN Transistors2SC33571.70 0.1 Features Low noise and high gain High power gain Large Ptot0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Conti

 7.4. Size:2447K  slkor
2sc3357a 2sc3357b 2sc3357c 2sc3357d.pdf

2SC3357-E
2SC3357-E

2SC3357NPN2SC3357 NPN SOT-89 VHFUHF CATV :S21e2 10 dB @ VCE=10V

 7.5. Size:364K  cn shikues
2sc3357a 2sc3357b 2sc3357c 2sc3357d 2sc3357e.pdf

2SC3357-E
2SC3357-E

NPN SILICON RF TRANSISTOR Feature High gain:S21e2 TYP. Value is 10dB @ VCE=10VIC=20mAf=1GHz Low noise: NF TYP. Value is 1.7dB @ VCE=10VIC=7mAf=1GHz fT (TYP.) : TYP. Value is 6.5GHz @ VCE=10VIC=20mAf=1GHz PIN DEFINITION: 1 Collector 3Base 2 Emitter SOT-89 Absolute Maximum Ratings TA=25 Unless Otherwise noted PARAMETER SYM

 7.6. Size:1157K  cn tech public
2sc3357.pdf

2SC3357-E
2SC3357-E

 7.7. Size:1029K  cn hottech
2sc3357.pdf

2SC3357-E
2SC3357-E

2SC3357NPN Silicon RF TransistorFEATURESLow Noise and High GainNF = 1.1 dB TYP., G = 8.0 dB TYP.a@V = 10 V, I = 7 mA, f = 1.0 GHzCE CNF = 1.8 dB TYP., G = 9.0 dB TYP.a@V = 10 V, I = 40 mA, f = 1.0 GHzCE CAPPLICATIONSSOT-89Designed for low noise amplifier at VHF, UHF and CATV band.MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammabil

 7.8. Size:188K  inchange semiconductor
2sc3357.pdf

2SC3357-E
2SC3357-E

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3357DESCRIPTIONLow Noise and High GainNF = 1.1 dB TYP., G = 8.0 dB TYP.a@V = 10 V, I = 7 mA, f = 1.0 GHzCE CNF = 1.8 dB TYP., G = 9.0 dB TYP.a@V = 10 V, I = 40 mA, f = 1.0 GHzCE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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