2SC3357-F pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

..1. Size:625K cn evvo

2SC3357 SMD Ty p e NPN Transistors 3 Features 2 Low noise and high gain 1 1.Base High power gain 2.Collector Large Ptot 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Contin... See More ⇒

7.1. Size:257K nec

ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf pdf_icon

NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 7 GHz LOW NOISE FIGURE 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator application... See More ⇒

7.2. Size:77K nec

2sc3357.pdf pdf_icon

DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC3357 is an NPN silicon epitaxial transistor designed for (Unit mm) low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. 4.5 0.1 1.5 0.1 1.6 0.2 FEATURES Low Noise and High Gain NF = 1.1 dB TYP.,... See More ⇒

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SMD Type Transistors NPN Transistors 2SC3357 1.70 0.1 Features Low noise and high gain High power gain Large Ptot 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Conti... See More ⇒

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2sc3357a 2sc3357b 2sc3357c 2sc3357d.pdf pdf_icon

2SC3357 NPN 2SC3357 NPN SOT-89 VHF UHF CATV S21e 2 10 dB @ VCE=10V... See More ⇒

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2sc3357a 2sc3357b 2sc3357c 2sc3357d 2sc3357e.pdf pdf_icon

NPN SILICON RF TRANSISTOR Feature High gain S21e 2 TYP. Value is 10dB @ VCE=10V IC=20mA f=1GHz Low noise NF TYP. Value is 1.7dB @ VCE=10V IC=7mA f=1GHz fT (TYP.) TYP. Value is 6.5GHz @ VCE=10V IC=20mA f=1GHz PIN DEFINITION 1 Collector 3 Base 2 Emitter SOT-89 Absolute Maximum Ratings TA=25 Unless Otherwise noted PARAMETER SYM... See More ⇒

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2SC3357 NPN Silicon RF Transistor FEATURES Low Noise and High Gain NF = 1.1 dB TYP., G = 8.0 dB TYP. a @V = 10 V, I = 7 mA, f = 1.0 GHz CE C NF = 1.8 dB TYP., G = 9.0 dB TYP. a @V = 10 V, I = 40 mA, f = 1.0 GHz CE C APPLICATIONS SOT-89 Designed for low noise amplifier at VHF, UHF and CATV band. MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammabil... See More ⇒

7.8. Size:188K inchange semiconductor

2sc3357.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3357 DESCRIPTION Low Noise and High Gain NF = 1.1 dB TYP., G = 8.0 dB TYP. a @V = 10 V, I = 7 mA, f = 1.0 GHz CE C NF = 1.8 dB TYP., G = 9.0 dB TYP. a @V = 10 V, I = 40 mA, f = 1.0 GHz CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed ... See More ⇒