2SA1295O Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1295O
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 230 V
Maximum Collector-Emitter Voltage |Vce|: 230 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 17 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 35 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: MT200
2SA1295O Transistor Equivalent Substitute - Cross-Reference Search
2SA1295O Datasheet (PDF)
2sa1295.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1295 DESCRIPTION With MT-200 package Complement to type 2SC3264 APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAM
2sa1295.pdf
LAPT 2SA1295Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264)Application : Audio and General(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions MT-200Symbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 230 V ICBO VCB=230V 100max A0.224.42.1VCEO V IEBO VEB=5V 100max
2sa1295.pdf
isc Silicon PNP Power Transistor 2SA1295DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -230V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3264Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
