All Transistors. 2SA1295Y Datasheet

 

2SA1295Y Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1295Y
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 230 V
   Maximum Collector-Emitter Voltage |Vce|: 230 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 17 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 35 MHz
   Collector Capacitance (Cc): 500 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: MT200

 2SA1295Y Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1295Y Datasheet (PDF)

 7.1. Size:203K  jmnic
2sa1295.pdf

2SA1295Y
2SA1295Y

JMnic Product Specification Silicon PNP Power Transistors 2SA1295 DESCRIPTION With MT-200 package Complement to type 2SC3264 APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAM

 7.2. Size:28K  sanken-ele
2sa1295.pdf

2SA1295Y

LAPT 2SA1295Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264)Application : Audio and General(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions MT-200Symbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 230 V ICBO VCB=230V 100max A0.224.42.1VCEO V IEBO VEB=5V 100max

 7.3. Size:1544K  jilin sino
2sc3264 2sa1295.pdf

2SA1295Y
2SA1295Y

Complementary NPN-PNP Power Bipolar Transistor R 2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltageV =230V (min) CEO CEONPN-PNP Complementary NPN-PNP

 7.4. Size:731K  jilin sino
2sa1295 2sc3264.pdf

2SA1295Y
2SA1295Y

Complementary NPN-PNP Power Bipolar Transistor R2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltageV =230V (min) CEO CEO NPN-PNP Complementary NPN-

 7.5. Size:220K  inchange semiconductor
2sa1295.pdf

2SA1295Y
2SA1295Y

isc Silicon PNP Power Transistor 2SA1295DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -230V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3264Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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