2SA1295Y Datasheet and Replacement

JMnic Product Specification Silicon PNP Power Transistors 2SA1295 DESCRIPTION With MT-200 package Complement to type 2SC3264 APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAM

LAPT 2SA1295Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264)Application : Audio and General(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions MT-200Symbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 230 V ICBO VCB=230V 100max A0.224.42.1VCEO V IEBO VEB=5V 100max

Complementary NPN-PNP Power Bipolar Transistor R 2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltageV =230V (min) CEO CEONPN-PNP Complementary NPN-PNP

Complementary NPN-PNP Power Bipolar Transistor R2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltageV =230V (min) CEO CEO NPN-PNP Complementary NPN-

isc Silicon PNP Power Transistor 2SA1295DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -230V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3264Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA