2SA1298 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1298
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 135 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 130 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO236
2SA1298 Transistor Equivalent Substitute - Cross-Reference Search
2SA1298 Datasheet (PDF)
2sa1298.pdf
2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Unit: mm Power Switching Applications High DC current gain: hFE = 100~320 Low saturation voltage: V = -0.4 V (max) CE (sat)(I = -500 mA, I = -20 mA) C B Suitable for driver stage of small motor Complementary to 2SC3265 Small package Max
2sa1298.pdf
2SA1298Features Power Switching Application Low Frequency Power Amplifier Application Halogen Free. Green Device (Note 1)PNP General Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPurpose Amplifier Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings @ 25C Unless
2sa1298.pdf
2SA1298 -0.8A , -35V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Low Frequency Power Amplifier Application A Power Switching Applications L33Top View C BCLASSIFICATION OF hFE (1) 11 2Product-Rank 2SA1298-O 2SA1298-Y 2K ERange 100~20
2sa1298.pdf
2SA1 298TRANSISTOR(PNP)SOT23 FEATURES Low Frequency Power Amplifier Application Power Swithing Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -35 V CBO3. COLLECTOR V Collector-Emitter Voltage -30 V CEOV Emitter-Base Voltage -5 V EBOI Collector Current -800 mA C
2sa1298.pdf
SMD Type TransistorsPNP Transistors2SA1298SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-0.8A1 2 Collector Emitter Voltage VCEO=-30V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 Low Frequency Power Amplifier Application Power Swithing Applications1.Base Complementary to 2SC32652.Emitter3.collecto
2sa1298o 2sa1298y.pdf
2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Unit: mmPower Switching Applications High DC current gain: hFE = 100 to 320 Low saturation voltage: VCE (sat) = -0.4 V (max) (IC = -500 mA, IB = -20 mA) Suitable for driver stage of small motor Complementary to 2SC3265 Small package Absolu
2sa1298-o.pdf
MCC2SA1298-OTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1298-YPhone: (818) 701-4933Fax: (818) 701-4939Features Power switching application Low frequency power amplifier application PNP General Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Purpose Amplifier Lead Free Fin
2sa1298-y.pdf
MCC2SA1298-OTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1298-YPhone: (818) 701-4933Fax: (818) 701-4939Features Power switching application Low frequency power amplifier application PNP General Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Purpose Amplifier Lead Free Fin
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
