2SA1298Y Datasheet and Replacement

2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Unit: mmPower Switching Applications High DC current gain: hFE = 100 to 320 Low saturation voltage: VCE (sat) = -0.4 V (max) (IC = -500 mA, IB = -20 mA) Suitable for driver stage of small motor Complementary to 2SC3265 Small package Absolu

2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Unit: mm Power Switching Applications High DC current gain: hFE = 100~320 Low saturation voltage: V = -0.4 V (max) CE (sat)(I = -500 mA, I = -20 mA) C B Suitable for driver stage of small motor Complementary to 2SC3265 Small package Max

MCC2SA1298-OTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1298-YPhone: (818) 701-4933Fax: (818) 701-4939Features Power switching application Low frequency power amplifier application PNP General Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Purpose Amplifier Lead Free Fin

MCC2SA1298-OTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1298-YPhone: (818) 701-4933Fax: (818) 701-4939Features Power switching application Low frequency power amplifier application PNP General Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Purpose Amplifier Lead Free Fin

2SA1298Features Power Switching Application Low Frequency Power Amplifier Application Halogen Free. Green Device (Note 1)PNP General Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPurpose Amplifier Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings @ 25C Unless

2SA1298 -0.8A , -35V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Low Frequency Power Amplifier Application A Power Switching Applications L33Top View C BCLASSIFICATION OF hFE (1) 11 2Product-Rank 2SA1298-O 2SA1298-Y 2K ERange 100~20

2SA1 298TRANSISTOR(PNP)SOT23 FEATURES Low Frequency Power Amplifier Application Power Swithing Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -35 V CBO3. COLLECTOR V Collector-Emitter Voltage -30 V CEOV Emitter-Base Voltage -5 V EBOI Collector Current -800 mA C

SMD Type TransistorsPNP Transistors2SA1298SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-0.8A1 2 Collector Emitter Voltage VCEO=-30V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 Low Frequency Power Amplifier Application Power Swithing Applications1.Base Complementary to 2SC32652.Emitter3.collecto