All Transistors. 2SA1300G Datasheet

 

2SA1300G Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1300G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: TO92

 2SA1300G Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1300G Datasheet (PDF)

 7.1. Size:206K  toshiba
2sa1300.pdf

2SA1300G
2SA1300G

2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications High DC current gain and excellent hFE linearity : h = 140~600 (V = -1 V, I = -0.5 A) FE (1) CE C: h = 60 (min), 120 (typ.) (V = -1 V, I = -4 A) FE (2) CE C Low saturation voltage: V = -0.5 V (max) CE (sat)(I = -2 A,

 7.2. Size:91K  utc
2sa1300.pdf

2SA1300G
2SA1300G

UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications. FEATURES * High DC Current Gain and Excellent h Linearity. FE* h =140-600, (V = -1V,I = -0.5A) FE(1) CE C* h =60(Min.),120(Typ.),(V = -1V,I = -4A) FE(2) CE C* Low Saturation Voltage * V =

 7.3. Size:395K  secos
2sa1300.pdf

2SA1300G
2SA1300G

2SA1300 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current gain and excellent hFE linearity Low Saturation Voltage G HEmitter Collector Base JCLASSIFICATION OF hFE(1) A DProduct-Rank 2SA1300-Y 2SA1300-GR 2SA1300-BL Mil

 7.4. Size:405K  jiangsu
2sa1300.pdf

2SA1300G
2SA1300G

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SA1300 TRANSISTOR (PNP) TO-92FEATURES High DC Current Gain and Exceiient hFE inearity 1. EMITTER Low Saturation Voitage 2. COLLECTOR 3. BASE Equivalent Circuit 2SA1300=Device code Solid dot=Green molding compound device, if none,the normal

 7.5. Size:176K  lge
2sa1300.pdf

2SA1300G
2SA1300G

2SA1300(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC Current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -10 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Co

 7.6. Size:585K  can-sheng
2sa1300.pdf

2SA1300G
2SA1300G

TO-92 Plastic-Encapsulate Transistors2SA13002SA13002SA1300 TRANSISTOR (PNP)2SA1300FEATURESFEATURESFEATURESFEATURESTO-92TO-92TO-92TO-92 High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearityLow saturation voltag

Datasheet: 2SA1298O , 2SA1298Y , 2SA1299 , 2SA12H , 2SA13 , 2SA130 , 2SA1300 , 2SA1300BL , TIP42 , 2SA1300Y , 2SA1301 , 2SA1301O , 2SA1301R , 2SA1302 , 2SA1302O , 2SA1302R , 2SA1303 .

 

 
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