2SA1303Y Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1303Y
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 14 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 400 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: TO3P
2SA1303Y Transistor Equivalent Substitute - Cross-Reference Search
2SA1303Y Datasheet (PDF)
2sa1303.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1303 DESCRIPTION With TO-3PN package Complement to type 2SC3284 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT
2sa1303.pdf
LAPT 2SA1303Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284)Application : Audio and General Purpose(Ta=25C) External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsSymbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.60.19.6 2.0VCBO 150 V ICBO VCB=150V 100max AVCEO 150 V IEBO VEB
2sa1303.pdf
isc Silicon PNP Power Transistor 2SA1303DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3284Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
Datasheet: 2SA1301O , 2SA1301R , 2SA1302 , 2SA1302O , 2SA1302R , 2SA1303 , 2SA1303O , 2SA1303P , TIP127 , 2SA1304 , 2SA1305 , 2SA1306 , 2SA1306A , 2SA1306AO , 2SA1306AY , 2SA1306B , 2SA1306BO .
