All Transistors. 2SA1306BY Datasheet

 

2SA1306BY Datasheet and Replacement


   Type Designator: 2SA1306BY
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO218
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2SA1306BY Datasheet (PDF)

 6.1. Size:397K  motorola
 2sa1306b 2sc3298b.pdf pdf_icon

2SA1306BY

 6.2. Size:159K  jmnic
 2sa1306 2sa1306a 2sa1306b.pdf pdf_icon

2SA1306BY

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B DESCRIPTION With TO-220Fa package Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDIT

 6.3. Size:218K  inchange semiconductor
 2sa1306 2sa1306a 2sa1306b.pdf pdf_icon

2SA1306BY

isc Silicon PNP Power Transistors 2SA1306/A/BDESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)-2SA1306(BR)CEO= -180V(Min)-2SA1306A= -200V(Min)-2SA1306BComplement to Type 2SC3298/A/BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amp

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Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: MD698A | MJE703 | 2N4430 | 2N4432 | 2SD1536M | MJE13002I5 | MD3725F

Keywords - 2SA1306BY transistor datasheet

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