2SA1307O Specs and Replacement
Type Designator: 2SA1307O
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO218
2SA1307O Substitution
2SA1307O datasheet
2sa1307.pdf
2SA1307 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SC3299 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -5 A Collector Dissipation (Tc=25 PC 20 W ... See More ⇒
2sa1307.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1307 DESCRIPTION With TO-220Fa package Complement to type 2SC3299 Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO ... See More ⇒
2sa1307.pdf
isc Silicon PNP Power Transistor 2SA1307 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max.)@I = -3A CE(sat) C High Switching Speed Complement to Type 2SC3299 Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA... See More ⇒
Detailed specifications: 2SA1306AO , 2SA1306AY , 2SA1306B , 2SA1306BO , 2SA1306BY , 2SA1306O , 2SA1306Y , 2SA1307 , D209L , 2SA1307Y , 2SA1308 , 2SA1309 , 2SA1309A , 2SA131 , 2SA1310 , 2SA1311 , 2SA1312 .
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