2SA1307Y Datasheet and Replacement
Type Designator: 2SA1307Y
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO218
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2SA1307Y Datasheet (PDF)
2sa1307.pdf

2SA1307 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SC3299ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -5 A Collector Dissipation (Tc=25 PC 20 W
2sa1307.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1307 DESCRIPTION With TO-220Fa package Complement to type 2SC3299 Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO
2sa1307.pdf

isc Silicon PNP Power Transistor 2SA1307DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -3ACE(sat) CHigh Switching SpeedComplement to Type 2SC3299Minimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
Datasheet: 2SA1306AY , 2SA1306B , 2SA1306BO , 2SA1306BY , 2SA1306O , 2SA1306Y , 2SA1307 , 2SA1307O , 2N4401 , 2SA1308 , 2SA1309 , 2SA1309A , 2SA131 , 2SA1310 , 2SA1311 , 2SA1312 , 2SA1312BL .
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History: 2SB1260-P | 2N2986



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