2SA1309A Specs and Replacement
Type Designator: 2SA1309A
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 typ MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SC72
- BJT ⓘ Cross-Reference Search
2SA1309A datasheet
..1. Size:35K panasonic
2sa1309a.pdf 
Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SC3311A 4.0 0.2 Features High foward current transfer ratio hFE. Allowing supply with the radial taping. Optimum for high-density mounting. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V 1.27 1.... See More ⇒
..2. Size:39K panasonic
2sa1309a e.pdf
Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SC3311A 4.0 0.2 Features High foward current transfer ratio hFE. Allowing supply with the radial taping. Optimum for high-density mounting. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V 1.27 1.... See More ⇒
7.1. Size:252K 1
2sa1309.pdf
Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Request... See More ⇒
8.2. Size:206K toshiba
2sa1300.pdf
2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Unit mm Medium Power Amplifier Applications High DC current gain and excellent hFE linearity h = 140 600 (V = -1 V, I = -0.5 A) FE (1) CE C h = 60 (min), 120 (typ.) (V = -1 V, I = -4 A) FE (2) CE C Low saturation voltage V = -0.5 V (max) CE (sat) (I = -2 A,... See More ⇒
8.4. Size:91K utc
2sa1300.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications. FEATURES * High DC Current Gain and Excellent h Linearity. FE * h =140-600, (V = -1V,I = -0.5A) FE(1) CE C * h =60(Min.),120(Typ.),(V = -1V,I = -4A) FE(2) CE C * Low Saturation Voltage * V =... See More ⇒
8.6. Size:395K secos
2sa1300.pdf
2SA1300 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current gain and excellent hFE linearity Low Saturation Voltage G H Emitter Collector Base J CLASSIFICATION OF hFE(1) A D Product-Rank 2SA1300-Y 2SA1300-GR 2SA1300-BL Mil... See More ⇒
8.7. Size:25K wingshing
2sa1301.pdf
2SA1301 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER 2-21F1A High Current Capability High Power Dissipation Complementary to 2SC3280 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -160 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -12 A Co... See More ⇒
8.8. Size:69K wingshing
2sa1307.pdf
2SA1307 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SC3299 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -5 A Collector Dissipation (Tc=25 PC 20 W ... See More ⇒
8.9. Size:405K jiangsu
2sa1300.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR (PNP) TO-92 FEATURES High DC Current Gain and Exceiient hFE inearity 1. EMITTER Low Saturation Voitage 2. COLLECTOR 3. BASE Equivalent Circuit 2SA1300=Device code Solid dot=Green molding compound device, if none,the normal... See More ⇒
8.10. Size:198K jmnic
2sa1301.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1301 DESCRIPTION With TO-3PL package Complement to type 2SC3280 APPLICATIONS Power amplifier applications Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol ... See More ⇒
8.11. Size:219K jmnic
2sa1302.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1302 DESCRIPTION With TO-3PL package Complement to type 2SC3281 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol ... See More ⇒
8.12. Size:211K jmnic
2sa1307.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1307 DESCRIPTION With TO-220Fa package Complement to type 2SC3299 Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO ... See More ⇒
8.13. Size:145K jmnic
2sa1308.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1308 DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collec... See More ⇒
8.14. Size:196K jmnic
2sa1304.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1304 DESCRIPTION With TO-220Fa package Complement to type 2SC3296 High breakdown voltage APPLICATIONS Power amplifier applications Vertical output applicatios PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Colle... See More ⇒
8.15. Size:151K jmnic
2sa1305.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1305 DESCRIPTION With TO-220Fa package Low collector saturation voltage High transition frequency APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta... See More ⇒
8.16. Size:159K jmnic
2sa1306 2sa1306a 2sa1306b.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B DESCRIPTION With TO-220Fa package Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDIT... See More ⇒
8.17. Size:193K jmnic
2sa1303.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1303 DESCRIPTION With TO-3PN package Complement to type 2SC3284 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT ... See More ⇒
8.18. Size:28K sanken-ele
2sa1303.pdf
LAPT 2SA1303 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284) Application Audio and General Purpose (Ta=25 C) External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 150 V ICBO VCB= 150V 100max A VCEO 150 V IEBO VEB... See More ⇒
8.19. Size:176K lge
2sa1300.pdf
2SA1300(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC Current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -10 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Co... See More ⇒
8.20. Size:585K can-sheng
2sa1300.pdf
TO-92 Plastic-Encapsulate Transistors 2SA1300 2SA1300 2SA1300 TRANSISTOR (PNP) 2SA1300 FEATURES FEATURES FEATURES FEATURES TO-92 TO-92 TO-92 TO-92 High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearity Low saturation voltag... See More ⇒
8.21. Size:188K inchange semiconductor
2sa1306 2sa1306a.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1306/A DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -160V(Min)-2SA1306 (BR)CEO = -180V(Min)-2SA1306A Complement to Type 2SC3298/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplif... See More ⇒
8.22. Size:221K inchange semiconductor
2sa1301.pdf
isc Silicon PNP Power Transistor 2SA1301 DESCRIPTION High Power Dissipation Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Complement to Type 2SC3280 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications... See More ⇒
8.23. Size:128K inchange semiconductor
2sa1302.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1302 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) Complement to Type 2SC3281 APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage applica... See More ⇒
8.24. Size:216K inchange semiconductor
2sa1307.pdf
isc Silicon PNP Power Transistor 2SA1307 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max.)@I = -3A CE(sat) C High Switching Speed Complement to Type 2SC3299 Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA... See More ⇒
8.25. Size:198K inchange semiconductor
2sa1308.pdf
isc Silicon PNP Power Transistor 2SA1308 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SC3308 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -100 V CBO V Coll... See More ⇒
8.26. Size:140K inchange semiconductor
2sa1306 a b.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION Good Linearity of hFE High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B Complement to Type 2SC3298/A/B APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE... See More ⇒
8.27. Size:214K inchange semiconductor
2sa1304.pdf
isc Silicon PNP Power Transistor 2SA1304 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Complement to Type 2SC3296 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collecto... See More ⇒
8.28. Size:192K inchange semiconductor
2sa1306.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1306 DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Complement to Type 2SC3298 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM... See More ⇒
8.29. Size:217K inchange semiconductor
2sa1305.pdf
isc Silicon PNP Power Transistor 2SA1305 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -30V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3297 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Car radio and car stereo output stage applications. ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒
8.30. Size:218K inchange semiconductor
2sa1306 2sa1306a 2sa1306b.pdf
isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -160V(Min)-2SA1306 (BR)CEO = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B Complement to Type 2SC3298/A/B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amp... See More ⇒
8.31. Size:220K inchange semiconductor
2sa1303.pdf
isc Silicon PNP Power Transistor 2SA1303 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3284 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
Detailed specifications: 2SA1306BY
, 2SA1306O
, 2SA1306Y
, 2SA1307
, 2SA1307O
, 2SA1307Y
, 2SA1308
, 2SA1309
, NJW0281G
, 2SA131
, 2SA1310
, 2SA1311
, 2SA1312
, 2SA1312BL
, 2SA1312GR
, 2SA1313
, 2SA1313O
.
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