All Transistors. 2SA1331O6 Datasheet

 

2SA1331O6 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1331O6
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 110 MHz
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO236

 2SA1331O6 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1331O6 Datasheet (PDF)

 7.1. Size:128K  sanyo
2sa1331 2sc3361.pdf

2SA1331O6 2SA1331O6

Ordering number:EN3217PNP/NPN Epitaxial Planar Silicon Transistors2SA1331/2SC3361High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High breakdown voltage.2018A Small-sized package permitting the 2SA1331/[2SA1331/2SC3361]2SC3361-applied sets to be made small and slim.Switching Time Test CircuitC : CollectorB : Base(Fo

 7.2. Size:983K  kexin
2sa1331.pdf

2SA1331O6 2SA1331O6

SMD Type orSMD Type TransistICsPNP Transistors 2SA1331SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesFast switching speed.High breakdown voltage.1 2 Small-sized package permitting the 2SA1331/+0.050.95+0.1-0.1 0.1 -0.012SC3361-applied sets to be made small and slim. 1.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Sy

 8.1. Size:130K  1
2sa1335 2sa1378.pdf

2SA1331O6

 8.2. Size:139K  sanyo
2sa1339 2sc3393.pdf

2SA1331O6 2SA1331O6

Ordering number:EN1392APNP/NPN Epitaxial Planar Silicon Transistors2SA1339/2SC3393High-Speed Switching ApplicationsFeatures Package Dimensions Very small-sized package permitting sets to be small-unit:mmsized, slim.2033 High breakdown voltage : VCEO=()50V.[2SA1339/2SC3393] Complementary pair transistor having large currentcapacity and high fT. Adoption o

 8.3. Size:155K  sanyo
2sa1338 2sc3392.pdf

2SA1331O6 2SA1331O6

Ordering number:EN1421APNP/NPN Epitaxial Planar Silicon Transistors2SA1338/2SC3392High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage : VCEO=()50V.2018A Large current capacitiy and high fT.[2SA1338/2SC3392] Very small-sized package permitting sets to be small-sized, slim.Switching Time Test

 8.4. Size:189K  nec
2sa1330.pdf

2SA1331O6 2SA1331O6

 8.5. Size:24K  hitachi
2sa1337.pdf

2SA1331O6 2SA1331O6

2SA1337Silicon PNP EpitaxialApplication Low frequency low noise amplifier HF amplefierOutlineSPAK1. Emitter122. Collector33. Base2SA1337Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5 VCollector current IC 100 mACollector

 8.6. Size:159K  jmnic
2sa1333.pdf

2SA1331O6 2SA1331O6

JMnic Product Specification Silicon PNP Power Transistors 2SA1333 DESCRIPTION With MT-200 package High power dissipation APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER

 8.7. Size:152K  jmnic
2sa1332.pdf

2SA1331O6 2SA1331O6

JMnic Product Specification Silicon PNP Power Transistors 2SA1332 DESCRIPTION With TO-220Fa package High VCEO APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter -160

 8.8. Size:1445K  kexin
2sa1338.pdf

2SA1331O6 2SA1331O6

SMD Type orSMD Type TransistICsPNP Transistors 2SA1338SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesAdoption of FBET process.High breakdown voltage : VCEO=-50V.1 2Large current capacitiy and high fT.+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1Ultrasmall-sized package permitting setsto be smallsized, slim.1.Base Complementary to 2SC33922.Emitter3

 8.9. Size:1269K  kexin
2sa1330.pdf

2SA1331O6 2SA1331O6

SMD Type TransistorsPNP Transistors 2SA1330SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesHigh DC current gain.High voltage.1 2+0.05 Complementary to 2SC3360 0.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -200 VCollector-emitter voltage VCEO -2

 8.10. Size:194K  inchange semiconductor
2sa1333.pdf

2SA1331O6 2SA1331O6

isc Silicon PNP Power Transistor 2SA1333DESCRIPTIONHigh Collector-Emitter Breakdown VoltageGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -200 VCBOV Collec

 8.11. Size:190K  inchange semiconductor
2sa1332.pdf

2SA1331O6 2SA1331O6

isc Silicon PNP Power Transistor 2SA1332DESCRIPTIONLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower power amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -160 VCBOV Collector-Emitter

Datasheet: 2SA1329 , 2SA1329O , 2SA1329Y , 2SA133 , 2SA1330 , 2SA1331 , 2SA1331O4 , 2SA1331O5 , BC557 , 2SA1332 , 2SA1333 , 2SA1334 , 2SA1335 , 2SA1336 , 2SA1337 , 2SA1338 , 2SA1338-4 .

 

 
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