2SA1351 Datasheet and Replacement

   Type Designator: 2SA1351
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 200(typ) MHz
   Collector Capacitance (Cc): 4.5(max) pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92MOD

2SA1351 Substitution

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2SA1351 Datasheet (PDF)

8.1. Size:179K toshiba
2sa1359.pdf pdf_icon

8.2. Size:177K toshiba
2sa1356.pdf pdf_icon

8.3. Size:176K toshiba
2sa1357.pdf pdf_icon

8.4. Size:178K toshiba
2sa1358.pdf pdf_icon

8.5. Size:150K sanyo
2sa1353 2sc3417.pdf pdf_icon

Ordering number:EN1390DPNP/NPN Epitaxial Planar Silicon Transistors2SA1353/2SC3417Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Color TV chroma output, high-voltage driver appli-2009Bcations.[2SA1353/2SC3417]Features High breakdown voltage : VCEO 300V. Excellent high fr

8.6. Size:149K sanyo
2sa1352 2sc3416.pdf pdf_icon

Ordering number:EN1411CPNP/NPN Epitaxial Planar Silicon Transistors2SA1352/2SC3416Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Color TV chroma output, high-voltage driverunit:mmapplicatons.2009B[2SA1352/2SC3416]Features High breakdown voltage : VCEO 200V. Small reverse transfer capacitance and excellent highfreq

8.7. Size:24K hitachi
2sa1350.pdf pdf_icon

2SA1350Silicon PNP EpitaxialApplication Low frequency low noise amplifier HF amplefierOutlineSPAK1. Emitter122. Collector33. Base2SA1350Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 40 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 5 VCollector current IC 100 mACollector

8.8. Size:148K jmnic
2sa1355.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1355 DESCRIPTION With TO-220 package Low collector saturation voltage. Short switching time. APPLICATIONS Various inductance lamp drivers for electrical equipment. Inverters, converters Power amplifier High-speed switching PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mountin

8.9. Size:200K jmnic
2sa1359.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1359 DESCRIPTION With TO-126 package Complement to type 2SC3422 Good linearity of hFE APPLICATIONS Audio frequency amplifier Low speed switching Suitable for output stage of 5W car radio and car stereo PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolu

8.10. Size:251K lzg
2sa1357 3ca1357.pdf pdf_icon

2SA1357(3CA1357) PNP /SILICON PNP TRANSISTOR :, Purpose: Strobe flash applications, audio power amplifier applications. I V C CE(sat)Features: High I ,low V . CCE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -35 V CBO

8.11. Size:249K lzg
2sa1359 3ca1359.pdf pdf_icon

2SA1359(3CA1359) PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency power amplifier and low speed switching applications. : 2SC3422(3DA3422) Features: Good linearity of h ,complementary to 2SC3422(3DA3422). FE/Absolute maximum ratings(Ta=25)

8.12. Size:213K inchange semiconductor
2sa1352.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1352DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -200V (Min)(BR)CEOComplement to Type 2SC3416Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV chroma output, high-voltage driverapplications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNIT

8.13. Size:190K inchange semiconductor
2sa1355.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1355DESCRIPTIONTO-220 packageHigh DC Current GainLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power transistor is developed for high-speedswitching and features a high h at low V ,which isFE CE(sat)ideal for use as a driver in DC/DC converters an

8.14. Size:222K inchange semiconductor
2sa1358-z.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1358-ZDESCRIPTIONWith TO-252(DPAK) packagingExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

8.15. Size:196K inchange semiconductor
2sa1359.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1359DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -40V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3422Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25

8.16. Size:211K inchange semiconductor
2sa1357.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1357DESCRIPTIONHigh Collector Current-I = -5.0ACDC Current Gain-: h = 70(Min)@I = -4AFE CLow Saturation Voltage: V = -1.0V(Max)@I = -4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobe flash applications.Audio power amplifier applications.ABSOLUTE MAXIMUM RATI

8.17. Size:196K inchange semiconductor
2sa1358.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1358DESCRIPTIONHigh Collector-Emitter Breakdown Voltage: V = -120V(Min)(BR)CEOComplement to Type 2SC3421Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collecto

Datasheet: 2SA1346 , 2SA1347 , 2SA1348 , 2SA1349 , 2SA1349BL , 2SA1349GR , 2SA135 , 2SA1350 , 2SC2655 , 2SA1352 , 2SA1352C , 2SA1352D , 2SA1352E , 2SA1352F , 2SA1353 , 2SA1353C , 2SA1353D .