2SA1358Y Specs and Replacement
Type Designator: 2SA1358Y
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO126
2SA1358Y Substitution
- BJT ⓘ Cross-Reference Search
2SA1358Y datasheet
isc Silicon PNP Power Transistor 2SA1358-Z DESCRIPTION With TO-252(DPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
isc Silicon PNP Power Transistor 2SA1358 DESCRIPTION High Collector-Emitter Breakdown Voltage V = -120V(Min) (BR)CEO Complement to Type 2SC3421 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collecto... See More ⇒
Detailed specifications: 2SA1356, 2SA1356O, 2SA1356Y, 2SA1357, 2SA1357O, 2SA1357Y, 2SA1358, 2SA1358O, 2SC2383, 2SA1359, 2SA1359O, 2SA1359Y, 2SA136, 2SA1360, 2SA1360O, 2SA1360Y, 2SA1361
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