All Transistors. 2SA1358Y Datasheet

 

2SA1358Y Datasheet and Replacement


   Type Designator: 2SA1358Y
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO126
 

 2SA1358Y Substitution

   - BJT ⓘ Cross-Reference Search

   

2SA1358Y Datasheet (PDF)

 7.1. Size:178K  toshiba
 2sa1358.pdf pdf_icon

2SA1358Y

 7.2. Size:222K  inchange semiconductor
 2sa1358-z.pdf pdf_icon

2SA1358Y

isc Silicon PNP Power Transistor 2SA1358-ZDESCRIPTIONWith TO-252(DPAK) packagingExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 7.3. Size:196K  inchange semiconductor
 2sa1358.pdf pdf_icon

2SA1358Y

isc Silicon PNP Power Transistor 2SA1358DESCRIPTIONHigh Collector-Emitter Breakdown Voltage: V = -120V(Min)(BR)CEOComplement to Type 2SC3421Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collecto

SHOW MORE

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: GSDR15020I | SLA4070 | 2SA1606 | 2SA1552R

Keywords - 2SA1358Y transistor datasheet

 2SA1358Y cross reference
 2SA1358Y equivalent finder
 2SA1358Y lookup
 2SA1358Y substitution
 2SA1358Y replacement

 

 
Back to Top

 


 
.