2SA1360Y Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1360Y
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 135 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO126
2SA1360Y Transistor Equivalent Substitute - Cross-Reference Search
2SA1360Y Datasheet (PDF)
2sa1360.pdf
2SA1360 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1360 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC3423 Small collector output capacitance: Cob = 2.5 pF (typ.) High transition frequency: fT = 200 MHz (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -150 VColle
2sa1360.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1360 DESCRIPTION With TO-126 package Complement to type 2SC3423 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VAL
2sa1360.pdf
isc Silicon PNP Power Transistor 2SA1360DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V (Min)(BR)CEOComplement to Type 2SC3423Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Volta
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
