2SA1386P Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1386P
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 130 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO3P
2SA1386P Transistor Equivalent Substitute - Cross-Reference Search
2SA1386P Datasheet (PDF)
2sa1386 2sa1386a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1386 2SA1386A DESCRIPTION With TO-3PN package Complement to type 2SC3519/3519A APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITI
2sa1386.pdf
LAPT 2SA1386/1386ASilicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Ratings RatingsSymbol Unit Symbol Conditions Unit0.24.80.415.62SA1386 2SA1386A 2SA1386 2SA1386A0.19.6 2.0VCBO 160 180 V 1
2sa1386b.pdf
RoHS 2SA1386B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon PNP Epitaxial Planar Transistor(Complement to type 2SC3519B)-15A/-160V,-180V/130W15.60.44.80.29.62.00.13.20,1TO-3P(B)23+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stageC Complem
2sa1386b-a.pdf
RoHS 2SA1386B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon PNP Epitaxial Planar Transistor(Complement to type 2SC3519B)-15A/-160V,-180V/130W15.60.44.80.29.62.00.13.20,1TO-3P(B)23+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stageC Complem
2sa1386.pdf
isc Silicon PNP Power Transistor 2SA1386DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3519Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
2sa1386 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1386/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1386 = -180V(Min)-2SA1386A Good Linearity of hFE Complement to Type 2SC3519/A APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALU
2sa1386 2sa1386a.pdf
isc Silicon PNP Power Transistors 2SA1386/ADESCRIPTIONCollector-Emitter Breakdown Voltage-V = -160V(Min)-2SA1386(BR)CEO= -180V(Min)-2SA1386AGood Linearity of hFEComplement to Type 2SC3519/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =
Datasheet: 2SA1384 , 2SA1385 , 2SA1386 , 2SA1386A , 2SA1386AO , 2SA1386AP , 2SA1386AY , 2SA1386O , BC327 , 2SA1386Y , 2SA1387 , 2SA1388 , 2SA1388O , 2SA1388Y , 2SA1389 , 2SA139 , 2SA1390 .
